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NSB1706DMW5T1/D PDF预览

NSB1706DMW5T1/D

更新时间: 2024-01-22 20:52:16
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其他 - ETC 晶体晶体管
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4页 37K
描述
Dual Bias Resistor Transistor

NSB1706DMW5T1/D 数据手册

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NSB1706DMW5T1  
Dual Bias Resistor  
Transistor  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base-emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSB1706DMW5T1, two  
BRT devices are housed in the SC-88A package which is ideal for low  
power surface mount applications where board space is at a premium.  
(5)  
Q1  
(4)  
Q2  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
(1)  
(2)  
(3)  
1
2
Rating  
Symbol  
Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
CBO  
V
CEO  
50  
50  
Vdc  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
SC-88A  
CASE 419A  
Total Device Dissipation  
P
187 (Note 1.)  
256 (Note 2.)  
1.5 (Note 1.)  
2.0 (Note 2.)  
mW  
D
T = 25°C  
A
Derate above 25°C  
mW/°C  
°C/W  
Thermal Resistance -  
Junction-to-Ambient  
R
670 (Note 1.)  
490 (Note 2.)  
θ
JA  
MARKING DIAGRAM  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
U6  
Total Device Dissipation  
P
250 (Note 1.)  
385 (Note 2.)  
2.0 (Note 1.)  
3.0 (Note 2.)  
mW  
D
T = 25°C  
A
Derate above 25°C  
mW/°C  
°C/W  
°C/W  
°C  
U6  
= Device Marking  
Thermal Resistance -  
Junction-to-Ambient  
R
493 (Note 1.)  
325 (Note 2.)  
θ
JA  
JL  
Thermal Resistance -  
Junction-to-Lead  
R
188 (Note 1.)  
208 (Note 2.)  
θ
Junction and Storage Temperature T , T  
- 55 to +150  
J
stg  
1. FR-4 @ Minimum Pad  
2. FR-4 @ 1.0 x 1.0 inch Pad  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
April, 2003 - Rev. 0  
NSB1706DMW5T1/D  

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