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NSAD500H-T1 PDF预览

NSAD500H-T1

更新时间: 2024-01-30 09:23:17
品牌 Logo 应用领域
瑞萨 - RENESAS 二极管
页数 文件大小 规格书
5页 110K
描述
TRANSIENT SUPPRESSOR DIODE ARRAY,UNIDIRECTIONAL,SOT-353

NSAD500H-T1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SSP
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.83击穿电压标称值:8 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE极性:UNIDIRECTIONAL
子类别:Transient Suppressors表面贴装:YES
Base Number Matches:1

NSAD500H-T1 数据手册

 浏览型号NSAD500H-T1的Datasheet PDF文件第2页浏览型号NSAD500H-T1的Datasheet PDF文件第3页浏览型号NSAD500H-T1的Datasheet PDF文件第4页浏览型号NSAD500H-T1的Datasheet PDF文件第5页 
DATA SHEET  
SURGE ABSORBER DEVICES  
NSAD500H  
ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES  
QUAD TYPE: COMMON ANODE  
SC-88A PACKAGE  
<R>  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
NSAD500H is a low capacity ESD surge absorber developed for  
100 to 500 Mbps-class data line ESD noise protection, such as  
USB2.0, IEEE1394, or 100B.  
2.1 0.1  
1.25 0.1  
Based on an IEC61000-4-2 test for electromagnetic interference  
(EMI), this device assures an ESD endurance of 8 kV or more on  
contact discharge, and its capacity between pins is as small as  
about 3.5 pF TYP. Therefore, NSAD500H is suitable for external  
interface protection on data communication whose speed has been  
increasing.  
1
2
3
5
4
FEATURES  
Base on the electrostatic discharge immunity test (IEC 61000-4-2)  
product assures the minimum endurance of 8 kV.  
Capacitance: 3.5 pF TYP.  
It’s an extraordinarily small capacitance.  
With 4 elements mounted (common anode).  
Mounted in the SC-88A package, the products can achiever high  
density and automatic packaging.  
ELECTRODE CONNECTION  
APPLICATIONS  
5
4
USB2.0, IEEE1394, 100B external interface circuit ESD protection.  
1. K1: Cathode1  
2. A: Anode (common)  
3. K2: Cathode2  
4. K3: Cathode3  
5. K4: Cathode4  
1
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
ITEM  
SYMBOL  
RATING  
UNIT  
mW  
W
REMARK  
Power Dissipation  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
P
200  
Total  
PRSM  
Tj  
2 (t = 10 μs, 1 pulse)  
150  
οC  
Tstg  
55 to +150  
οC  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16235EJ2V0DS00 (2nd edition)  
Date Published September 2007 NS  
Printed in Japan  
2003  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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