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NRVUS220VT3G PDF预览

NRVUS220VT3G

更新时间: 2024-11-21 11:01:31
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管
页数 文件大小 规格书
4页 66K
描述
Power Rectifier, Ultra-Fast Recovery, 2 A, 200 V

NRVUS220VT3G 数据手册

 浏览型号NRVUS220VT3G的Datasheet PDF文件第2页浏览型号NRVUS220VT3G的Datasheet PDF文件第3页浏览型号NRVUS220VT3G的Datasheet PDF文件第4页 
MURS220T3  
Preferred Device  
Surface Mount  
Ultrafast Power Rectifiers  
Ideally suited for high voltage, high frequency rectification, or as  
free wheeling and protection diodes in surface mount applications  
where compact size and weight are critical to the system.  
http://onsemi.com  
Small Compact Surface Mountable Package with J−Bend Leads  
Rectangular Package for Automated Handling  
High Temperature Glass Passivated Junction  
Low Forward Voltage Drop  
ULTRAFAST RECTIFIERS  
2 AMPERES  
200 VOLTS  
(0.77 Volts Max @ 2.0 A, T = 150°C)  
J
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 95 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING  
DIAGRAM  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
U2D  
SMB  
CASE 403A  
Shipped in 12 mm Tape and Reel, 2500 units per reel  
Polarity: Polarity Band Indicates Cathode Lead  
Marking: U2D  
U2D = Specific Device Code  
Pb−Free Package is Available  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Device  
Package  
Shipping  
Rating  
Symbol  
Value  
Unit  
MURS220T3  
MURS220T3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
200  
V
RRM  
SMB  
(Pb−Free)  
RWM  
V
R
Average Rectified Forward Current  
I
2.0 @ T =  
145°C  
A
A
F(AV)  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Non−Repetitive Peak Surge Current  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz)  
I
40  
FSM  
Operating Junction Temperature Range  
T
J
−65 to  
+175  
°C  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
November, 2004 − Rev. 2  
MURS220T3/D  

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