Datasheet > NRVTS12100EMFST1G

NRVTS12100EMFST1G

更新时间： 2024-11-21 01:21:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	69K
描述
Very Low Leakage Trench-based Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

NRVTS12100EMFST1G 数据手册

浏览型号NRVTS12100EMFST1G的Datasheet PDF文件第2页

浏览型号NRVTS12100EMFST1G的Datasheet PDF文件第3页

浏览型号NRVTS12100EMFST1G的Datasheet PDF文件第4页

NTS12100EMFS,

NRVTS12100EMFS

Very Low Leakage

Trench-based Schottky

Rectifier

http://onsemi.com

Features

• Fine Lithography Trench−based Schottky Technology for Very Low

Forward Voltage and Low Leakage

TRENCH SCHOTTKY

RECTIFIERS

• Fast Switching with Exceptional Temperature Stability

12 AMPERES

100 VOLTS

• Low Power Loss and Lower Operating Temperature

• Higher Efficiency for Achieving Regulatory Compliance

• Low Thermal Resistance

5,6

1,2,3

• High Surge Capability

• NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MARKING

DIAGRAM

• These are Pb−Free and Halide−Free Devices

TE1210

AYWWZZ

Typical Applications

SO−8 FLAT LEAD

CASE 488AA

STYLE 2

• Switching Power Supplies including Notebook / Netbook Adapters,

ATX and Flat Panel Display

Not Used

• High Frequency and DC−DC Converters

• Freewheeling and OR−ing diodes

TE1210 = Specific Device Code

= Assembly Location

= Year

• Reverse Battery Protection

• LED Lighting

= Work Week

= Lot Traceability

• Instrumentation

Mechanical Characteristics:

ORDERING INFORMATION

• Case: Epoxy, Molded

• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.

• Lead Finish: 100% Matte Sn (Tin)

Device

Package

Shipping†

1500 /

NTS12100EMFST1G,

SO−8 FL

• Lead and Mounting Surface Temperature for Soldering Purposes:

NRVTS12100EMFST1G

(Pb−Free) Tape & Reel

260°C Max. for 10 Seconds

NTS12100EMFST3G,

SO−8 FL 5000 /

• Device Meets MSL 1 Requirements

NRVTS12100EMFST3G

(Pb−Free) Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

September, 2014 − Rev. 2

NTS12100EMFS/D

12 3 4 5

中文翻译

下载PDF

NRVTS12100EMFST1G 替代型号

型号	品牌	替代类型	描述	数据表
NTS12100MFST3G	ONSEMI	类似代替	Very Low Forward Voltage Trench-based Schottky Rectifier
NTS12100EMFST3G	ONSEMI	类似代替	Very Low Leakage Trench-based Schottky Rectifier
NTS12100EMFST1G	ONSEMI	类似代替	Very Low Leakage Trench-based Schottky Rectifier

与NRVTS12100EMFST1G相关器件

型号	品牌	获取价格	描述	数据表
NRVTS12100EMFST3G	ONSEMI	获取价格	Very Low Leakage Trench-based Schottky Rectifier
NRVTS12100MFST1G	ONSEMI	获取价格	Very Low Forward Voltage Trench-based Schottky Rectifier
NRVTS12100MFST3G	ONSEMI	获取价格	Very Low Forward Voltage Trench-based Schottky Rectifier
NRVTS12100PFST3G	ONSEMI	获取价格	12 A, 100 V Trench Schottky Rectifier in TO-277 package
NRVTS12120EMFST1G	ONSEMI	获取价格	Very Low Leakage Trench-based Schottky Rectifier
NRVTS12120EMFST3G	ONSEMI	获取价格	Very Low Leakage Trench-based Schottky Rectifier
NRVTS12120MFST1G	ONSEMI	获取价格	Very Low Forward Voltage Trench-based Schottky Rectifier
NRVTS12120MFST3G	ONSEMI	获取价格	Very Low Forward Voltage Trench-based Schottky Rectifier
NRVTS1245EMFS	ONSEMI	获取价格	Schottky Rectifier
NRVTS1245EMFST1G	ONSEMI	获取价格	Schottky Rectifier

与NRVTS12100EMFST1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

24
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

16
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

48
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

NRVTS12100EMFST1G

NRVTS12100EMFST1G 数据手册

NRVTS12100EMFST1G 替代型号

与NRVTS12100EMFST1G相关器件

与NRVTS12100EMFST1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NRVTS12100EMFST1G

NRVTS12100EMFST1G 数据手册

NRVTS12100EMFST1G 替代型号

与NRVTS12100EMFST1G相关器件

与NRVTS12100EMFST1G相关文章

您还可以找

您在本页遇到什么问题？