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NPIC6C4894D PDF预览

NPIC6C4894D

更新时间: 2024-09-25 01:10:47
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
21页 981K
描述
Power logic 12-bit shift register; open-drain outputs

NPIC6C4894D 数据手册

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NPIC6C4894  
Power logic 12-bit shift register; open-drain outputs  
Rev. 1 — 17 April 2014  
Product data sheet  
1. General description  
The NPIC6C4894 is a 12-stage serial shift register. It has a storage latch associated with  
each stage for strobing data from the serial input (D) to the parallel open-drain outputs  
(QP0 to QP11). Data is shifted on positive-going clock (CP) transitions. The data in each  
shift register stage is transferred to the storage register when the latch enable (LE) input is  
HIGH. Data in the storage register drives the gate of the output extended-drain NMOS  
transistor whenever the output enable input (OE) is HIGH. A LOW on OE causes the  
outputs to assume a high-impedance OFF-state. Operation of the OE input does not affect  
the state of the registers. Two serial outputs (QS1 and QS2) are available for cascading a  
number of NIC6C4894 devices. Serial data is available at QS1 on positive-going clock  
edges to allow high-speed operation in cascaded systems with a fast clock rise time. The  
same serial data is available at QS2 on the next negative going clock edge. It is used for  
cascading NPIC6C4894 devices when the clock has a slow rise time. The open-drain  
outputs are 33 V/100 mA continuous current extended-drain NMOS transistors designed  
for use in systems that require moderate load power such as LEDs. Integrated voltage  
clamps in the outputs, provide protection against inductive transients. This protection  
makes the device suitable for power driver applications such as relays, solenoids and  
other low-current or medium-voltage loads.  
2. Features and benefits  
Specified from 40 C to +125 C  
Low RDSon  
12 Power EDNMOS transistor outputs of 100 mA continuous current  
250 mA current limit capability  
Output clamping voltage 33 V  
30 mJ avalanche energy capability  
Low power consumption  
Latch-up performance exceeds 100 mA per JESD 78 Class II level A  
ESD protection:  
HBM JS-2011 Class 2 exceeds 2500 V  
CDM JESD22-C101E exceeds 1000 V  

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