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NPIC6C4894-Q100 PDF预览

NPIC6C4894-Q100

更新时间: 2024-09-25 01:10:47
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
21页 949K
描述
Power logic 12-bit shift register; open-drain outputs

NPIC6C4894-Q100 数据手册

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NPIC6C4894-Q100  
Power logic 12-bit shift register; open-drain outputs  
Rev. 1 — 17 April 2014  
Product data sheet  
1. General description  
The NPIC6C4894-Q100 is a 12-stage serial shift register. It has a storage latch associated  
with each stage for strobing data from the serial input (D) to the parallel open-drain  
outputs (QP0 to QP11). Data is shifted on positive-going clock (CP) transitions. The data  
in each shift register stage is transferred to the storage register when the latch enable (LE)  
input is HIGH. Data in the storage register drives the gate of the output extended-drain  
NMOS transistor whenever the output enable input (OE) is HIGH. A LOW on OE causes  
the outputs to assume a high-impedance OFF-state. Operation of the OE input does not  
affect the state of the registers. Two serial outputs (QS1 and QS2) are available for  
cascading a number of NIC6C4894-Q100 devices. Serial data is available at QS1 on  
positive-going clock edges to allow high-speed operation in cascaded systems with a fast  
clock rise time. The same serial data is available at QS2 on the next negative going clock  
edge. It is used for cascading NPIC6C4894-Q100 devices when the clock has a slow rise  
time. The open-drain outputs are 33 V/100 mA continuous current extended-drain NMOS  
transistors designed for use in systems that require moderate load power such as LEDs.  
Integrated voltage clamps in the outputs, provide protection against inductive transients.  
This protection makes the device suitable for power driver applications such as relays,  
solenoids and other low-current or medium-voltage loads.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +125 C  
Low RDSon  
12 Power EDNMOS transistor outputs of 100 mA continuous current  
250 mA current limit capability  
Output clamping voltage 33 V  
30 mJ avalanche energy capability  
Low power consumption  
Latch-up performance exceeds 100 mA per JESD 78 Class II level A  
ESD protection:  
HBM AEC-Q100-002 revision D class H2 exceeds 2500 V  
CDM AEC-Q100-011 revision C1 class C6 exceeds 1000 V  

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