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NP36P06SLG

更新时间: 2024-02-16 00:45:06
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
7页 171K
描述
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET

NP36P06SLG 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
配置:Single最大漏极电流 (Abs) (ID):36 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):56 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

NP36P06SLG 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
NP36P06SLG  
SWITCHING  
P-CHANNEL POWER MOSFET  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
The NP36P06SLG is P-channel MOS Field Effect  
PACKAGE  
Transistor designed for high current switching applications.  
NP36P06SLG  
TO-252 (MP-3ZK)  
FEATURES  
(TO-252)  
Super low on-state resistance  
RDS(on)1 = 30 mΩ MAX. (VGS = 10 V, ID = 18 A)  
RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 18 A)  
Low input capacitance  
Ciss = 3200 pF TYP.  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
m20  
V
V
m36  
A
m108  
56  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
°C  
A
PT2  
1.2  
Tch  
175  
Storage Temperature  
Tstg  
55 to +175  
23.4  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
54.8  
mJ  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
2.68  
125  
°C/W  
°C/W  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18008EJ5V0DS00 (5th edition)  
Date Published November 2007 NS  
Printed in Japan  
2006  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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