DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36P06SLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
PART NUMBER
The NP36P06SLG is P-channel MOS Field Effect
PACKAGE
Transistor designed for high current switching applications.
NP36P06SLG
TO-252 (MP-3ZK)
FEATURES
(TO-252)
• Super low on-state resistance
RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A)
RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
• Low input capacitance
Ciss = 3200 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
−60
m20
V
V
m36
A
m108
56
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
1.2
Tch
175
Storage Temperature
Tstg
−55 to +175
23.4
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
54.8
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.68
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
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Document No. D18008EJ5V0DS00 (5th edition)
Date Published November 2007 NS
Printed in Japan
2006
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