Datasheet > NP34N055IHE-E2-AY

NP34N055IHE-E2-AY

更新时间： 2024-02-06 17:13:06

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	288K
描述
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252

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技术参数
数据手册

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NP34N055IHE-E2-AY 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	34 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	88 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

NP34N055IHE-E2-AY 数据手册

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NP34N055HHE, NP34N055IHE, NP34N055SHE

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

Zero Gate Voltage Drain Current

Gate Leakage Current

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

µA

V^DS= 55 V, VGS = 0 V

IDSS

V^GS= ±20 V, VDS = 0 V

V^DS= VGS, ID = 250 µA

V^DS= 10 V, ID = 17 A

V^GS= 10 V, ID = 17 A

V^DS= 25 V

±10

4.0

IGSS

VGS(th)

| y^fs|

R^DS(on)

Ciss

2.0

3.0

Gate to Source Threshold Voltage

Note

Forward Transfer Admittance

Note

2400

380

220

mΩ

Drain to Source On-state Resistance

Input Capacitance

1600

250

120

V^GS= 0 V

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Coss

Crss

f = 1 MHz

V^DD= 28 V, ID = 17 A

V^GS= 10 V

td(on)

R^G= 1 Ω

Turn-off Delay Time

Fall Time

td(off)

V^DD= 44 V

Total Gate Charge

V^GS= 10 V

Gate to Source Charge

Gate to Drain Charge

QGS

QGD

V^F(S-D)

trr

I^D= 34 A

Note

I^F= 34 A, VGS = 0 V

di/dt = 100 A/µs

1.0

Body Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Note Pulsed

Qrr

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

= 25 Ω

50 Ω

90%

Wave Form

10%

90%

PG.

GS = 20 → 0 V

VDS

90%

BVDSS

10% 10%

Wave Form

d(on)

d(off)

off

τ = 1

µs

Duty Cycle ≤ 1%

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= 2 mA

50 Ω

PG.

VDD

Data Sheet D14153EJ4V0DS

1 2 345 6 7...9

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