Datasheet > NP34N055ILE-AZ

NP34N055ILE-AZ

更新时间： 2024-01-24 20:52:55

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	171K
描述
Power Field-Effect Transistor, 34A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN

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NP34N055ILE-AZ 技术参数

生命周期：	Obsolete	零件包装代码：	TO-252
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	4
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.83
雪崩能效等级（Eas）：	100 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	55 V	最大漏极电流 (ID)：	34 A
最大漏源导通电阻：	0.024 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	136 A	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

NP34N055ILE-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP34N055HLE, NP34N055ILE, NP34N055SLE

SWITCHING

N-CHANNEL POWER MOSFET

DESCRIPTION

These products are N-Channel MOS Field Effect Tran-

sistors designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

PACKAGE

NP34N055HLE

TO-251 (JEITA) / MP-3

TO-252 (JEITA) / MP-3Z

TO-252 (JEDEC) / MP-3ZK

Note

NP34N055ILE

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)1= 18 mΩ MAX. (VGS = 10 V, ID = 17 A)

R^DS(on)2= 22 mΩ MAX. (VGS = 5 V, ID = 17 A)

• Low C^iss: Ciss = 2000 pF TYP.

• Built-in gate protection diode

NP34N055SLE

Note Not for new design.

(TO-251)

(TO-252)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage

VDSS

V^GSS

ID(DC)

ID(pulse)

Gate to Source Voltage

±20

±34

Drain Current (DC)

Drain Current (Pulse) ^Note1

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (TC = 25°C)

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

Channel Temperature

±136

1.2

IAS

34 / 27 / 10

E^AS

11 / 72 / 100 mJ

175 °C

–55 to + 175 °C

T^ch

Storage Temperature

T^stg

Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

Rth(ch-C)

1.70

125

°C/W

R^th(ch-A)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No.

D14154EJ4V0DS00 (4th edition)

The mark

shows major revised points.

Date Published July 2005 NS CP(K)

Printed in Japan

1999, 2005

12 3 4 5 6 7

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与NP34N055ILE-AZ相关器件

型号	品牌	描述	获取价格	数据表
NP34N055ILE-E1-AY	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252	获取价格
NP34N055SHE-AY	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252	获取价格
NP34N055SHE-E2-AY	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252	获取价格
NP34N055SLE	RENESAS	34A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN	获取价格
NP34N055SLE-E1-AY	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252AA	获取价格
NP34N055SLE-E2-AY	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252AA	获取价格

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