Datasheet > NP3502

NP3502

更新时间： 2022-02-26 12:53:54

品牌	Logo	应用领域
NAINA		/
页数	文件大小	规格书
2页	136K
描述
Press Fit Diode, 35A

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数据手册

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NP3502 数据手册

NP3502(R) thru

NP3506(R)

Naina Semiconductor Ltd.

Press Fit Diode, 35A

Features

•

Low Leakage

Low Forward Voltage Drop

Low Cost

High Surge Current Capability

Mechanical Characteristics

•

Chip: Gpp Chip

Encapsulation: Epoxy Sealed

Lead: Plated Lead, Solderable

Mounting: Press Fit

PRESS-FIT DIODE

Weight: 6.5 grams (approx.)

Electrical Characteristics (T_A= 25⁰C unless otherwise specified)

Parameter

Symbol

Units

NP3502(R)

NP3504(R)

NP3506(R)

Maximum repetitive peak reverse

voltage

V_RRM

200

400

600

Maximum RMS Voltage

V_RMS

V_DC

140

200

280

400

420

600

Maximum DC Blocking Voltage

Maximum average forward output

current @ T_A= 105⁰C

I_F(AV)

Peak forward surge current (8.3ms)

single half sine-wave superimposed

on rated load

I_FSM

400

Maximum instantaneous forward

voltage drop @ 100 A

V_F

I_R

1.0

5.0

T_A= 25⁰C

Maximum DC reverse

current at rated DC

blocking voltage

µA

T_A= 100⁰C

450

0.8

^oC/W

^oC

Typical Thermal Resistance

R_θ(j-c)

T_J, T_STG

Operating and storage temperature

-65 to +175

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

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