Datasheet > NP34N055IHE-E2

NP34N055IHE-E2

更新时间： 2024-01-13 02:27:36

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	288K
描述
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252

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NP34N055IHE-E2 数据手册

NP34N055HHE, NP34N055IHE, NP34N055SHE

Figure6. FORWARD TRANSFER CHARACTERISTICS

Figure7. DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

100

Pulsed

200

160

120

= 175˚C

150˚C

75˚C

0.1

GS =10 V

25˚C

−55˚C

0.01

VGS - Gate to Source Voltage - V

VDS - Drain to Source Voltage - V

Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

Figure8. FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

100

DS=10V

Pulsed

ID = 17 A

= 175˚C

75˚C

0.1

25˚C

−55˚C

0.01

0.1

100

ID - Drain Current - A

GS - Gate to Source Voltage - V

Figure10. DRAIN TO SOURCE ON-STATE

Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

RESISTANCE vs. DRAIN CURRENT

^Gµ^S

^D=^{S =}25^V0

Pulsed

4.0

3.0

2.0

1.0

GS = 10 V

100

1000

−50

100

150

D - Drain Current - A

ch - Channel Temperature - ˚C

Data Sheet D14153EJ4V0DS

1...3 4 567 8 9

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