Datasheet > NP34N055IHE-E1-AY

NP34N055IHE-E1-AY

更新时间： 2024-02-27 14:42:01

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	288K
描述
NP34N055IHE-E1-AY

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NP34N055IHE-E1-AY 数据手册

浏览型号NP34N055IHE-E1-AY的Datasheet PDF文件第2页

浏览型号NP34N055IHE-E1-AY的Datasheet PDF文件第3页

浏览型号NP34N055IHE-E1-AY的Datasheet PDF文件第4页

浏览型号NP34N055IHE-E1-AY的Datasheet PDF文件第6页

浏览型号NP34N055IHE-E1-AY的Datasheet PDF文件第7页

浏览型号NP34N055IHE-E1-AY的Datasheet PDF文件第8页

NP34N055HHE, NP34N055IHE, NP34N055SHE

TYPICAL CHARACTERISTICS (TA = 25°C)

Figure2. TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

Figure1. DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

140

120

100

25 50 75 100 125 150 175 200

- Case Temperature - ˚C

TC - Case Temperature - ˚C

Figure4. SINGLE AVALANCHE ENERGY

DERATING FACTOR

Figure3. FORWARD BIAS SAFE OPERATING AREA

120

100

1000

100

100 mJ

72 mJ

D(pulse)

D(DC)

I^AS= 10 A

27 A

34 A

11 mJ

= 25˚C

Single Pulse

0.1

100

125

150

175

DS - Drain to Source Voltage - V

Starting T^ch- Starting Channel Temperature - ˚C

Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

th(ch-A) = 125 ˚C/W

th(ch-C) = 1.70 ˚C/W

100

0.1

0.01

Single Pulse

= 25˚C

10 µ

1 m

10 m

100 m

100

1000

100 µ

PW - Pulse Width - s

Data Sheet D14153EJ4V0DS

1 2 3 456 7 8 9

下载PDF

与NP34N055IHE-E1-AY相关器件

型号	品牌	描述	获取价格	数据表
NP34N055IHE-E2	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252	获取价格
NP34N055IHE-E2-AY	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252	获取价格
NP34N055ILE	ETC	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 34A I(D) \| TO-252AA	获取价格
NP34N055ILE-AZ	NEC	Power Field-Effect Transistor, 34A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met	获取价格
NP34N055ILE-E1-AY	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252	获取价格
NP34N055SHE-AY	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252	获取价格