是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.38 |
雪崩能效等级(Eas): | 25 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (Abs) (ID): | 22 A | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.051 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 45 W |
最大脉冲漏极电流 (IDM): | 55 A | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP22N055SHE | RENESAS |
获取价格 |
22A, 55V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN |
![]() |
NP22N055SHE-E1-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,22A I(D),TO-252AA |
![]() |
NP22N055SHE-E2-AY | RENESAS |
获取价格 |
Power MOSFETs for Automotive, MP-3ZK, /Embossed Tape |
![]() |
NP22N055SLE | RENESAS |
获取价格 |
22A, 55V, 0.051ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN |
![]() |
NP22N055SLE | NEC |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met |
![]() |
NP22N055SLE-AY | RENESAS |
获取价格 |
22A, 55V, 0.051ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, MP-3ZK, 3/2 PIN |
![]() |
NP22N055SLE-E1-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,22A I(D),TO-252AA |
![]() |
NP22N055SLE-E2-AY | RENESAS |
获取价格 |
Power MOSFETs for Automotive, MP-3ZK, /Embossed Tape |
![]() |
NP2300GARLG | ONSEMI |
获取价格 |
260V, SILICON SURGE PROTECTOR, DO-15, ROHS COMPLIANT, PLASTIC, CASE 59AA-01, 2 PIN |
![]() |
NP2300SAMCT3G | ONSEMI |
获取价格 |
50A, Ultra Low Capacitance TSPD |
![]() |