是否Rohs认证: | 不符合 | 生命周期: | End Of Life |
零件包装代码: | TO-252AA | 包装说明: | TO-252, MP-3ZK, 3 PIN |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.39 | 雪崩能效等级(Eas): | 25 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.039 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 55 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP22N055SHE-E1-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,22A I(D),TO-252AA | |
NP22N055SHE-E2-AY | RENESAS |
获取价格 |
Power MOSFETs for Automotive, MP-3ZK, /Embossed Tape | |
NP22N055SLE | RENESAS |
获取价格 |
22A, 55V, 0.051ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN | |
NP22N055SLE | NEC |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Met | |
NP22N055SLE-AY | RENESAS |
获取价格 |
22A, 55V, 0.051ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, MP-3ZK, 3/2 PIN | |
NP22N055SLE-E1-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,22A I(D),TO-252AA | |
NP22N055SLE-E2-AY | RENESAS |
获取价格 |
Power MOSFETs for Automotive, MP-3ZK, /Embossed Tape | |
NP2300GARLG | ONSEMI |
获取价格 |
260V, SILICON SURGE PROTECTOR, DO-15, ROHS COMPLIANT, PLASTIC, CASE 59AA-01, 2 PIN | |
NP2300SAMCT3G | ONSEMI |
获取价格 |
50A, Ultra Low Capacitance TSPD | |
NP2300SAT3G | ONSEMI |
获取价格 |
Thyristor Surge Protectors High Voltage Bidirectional |