Datasheet > NNCD12C-T2-AT

NNCD12C-T2-AT

更新时间： 2023-01-03 05:25:38

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	164K
描述
TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR

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数据手册

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NNCD12C-T2-AT 数据手册

DATA SHEET

E.S.D NOISE CLIPPING DIODES

NNCD3.3C to NNCD12C

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES

(150 mW TYPE)

This product series is a diode developed for E.S.D (Electrostatic

PACKAGE DIMENSIONS

Discharge) noise protection. Based on the IEC1000-4-2 test on

electromagnetic interference (EMI), the diode assures an endur-

ance of no less than 30 kV, thus making itself most suitable for

external interface circuit protection.

(in millimeters)

2.1 ± 0.1

1.3 ± 0.1

Type NNCD3.3C to NNCD12C Series are into 2PIN Ultra Super

Mini Mold Package having allowable power dissipation of 150 mW.

FEATURES

•

Based on the electrostatic discharge immunity test (IEC1000-4-

2), the product assures the minimum endurance of 30 kV.

Based on the reference supply of the set, the product achieves

a series over a wide range (15 product name lined up).

Cathode

Indication

•

APPLICATIONS

•

External interface circuit E.S.D protection.

Circuits for Waveform clipper, Surge absorber.

MAXIMUM RATINGS (TA = 25 °C)

Power Dissipation

150 mW

Surge Reverse Power

Junction Temperature

Storage Temperature

P^RSM

T^j

85 W (tT = 10 µs 1 pulse) Fig. 6

150 °C

Tstg

–55 °C to +150 °C

Document No. D11771EJ2V0DS00 (2nd edition)

Date Published December 1996 N

Printed in Japan

1996

1 234 5 6 7...10

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NNCD12D-A	RENESAS	获取价格	NNCD12D-A
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NNCD12D-T2	RENESAS	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, SUPER MINIMOLD PACKAGE
NNCD12D-T2-A	RENESAS	获取价格	TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR
NNCD12D-T2-AT	RENESAS	获取价格	TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR
NNCD12E	NEC	获取价格	ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE
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NNCD12E-T1B	NEC	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, MINIMOLD, SC-59, 3 PIN