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NNCD18DT PDF预览

NNCD18DT

更新时间: 2024-01-20 21:27:32
品牌 Logo 应用领域
日电电子 - NEC 局域网光电二极管
页数 文件大小 规格书
2页 91K
描述
Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, SC-76, 2 PIN

NNCD18DT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SC-76
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.82
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
认证状态:Not Qualified表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NNCD18DT 数据手册

 浏览型号NNCD18DT的Datasheet PDF文件第2页 
Bi-directional ESD Protection Diodes  
-di  
In recent years, the trend towards miniature technology acceleration in semiconductors brings with it the significant problem of noise  
suppression and ESD protection. With this situation in mind, NEC Electronics released two new product series, NNCD∗∗DT and  
NNCD∗∗ST, in addition to the previous NNCD product lineup. These new products are designed for use with miniature, lightweight  
and low-profile features. These devices are ideal for noise suppression and ESD protection with bidirectional features as well.  
Application Example  
Features  
ECU (Electronic Control Unit)  
Suitable for positive/negative surge noise absorption  
Bi-directional ESD protection  
CAN Transceiver  
IEC 61000-4-2, level 4 compliance  
High-density surface mounting possible with JEITA SC-  
70 and SC-76 package  
CAN H  
CPU  
CRX 0  
CTX 0  
RxD  
TxD  
CAN L  
NNCD18ST  
NNCD27ST  
CAN  
Controller  
Applications  
ESD protection  
Surge noise absorption  
LIN Transceiver  
NNCD Series  
NNCD27DT  
Product Name  
NNCD∗∗DT  
NNCD∗∗ST  
UNIT: mm  
UNIT: mm  
2.5 0.15  
1.7 0.1  
0.65TYP.  
0.65TYP.  
2.0 0.2  
+0.1  
0  
0.3  
Maximum Ratings  
+0.1  
Package  
drawing  
0.3  
0  
1.25 0.1  
2.1 0.1  
Parameter  
Power dissipation  
Reverse surge power  
Junction temperature  
Storage temperature  
Symbol  
Rating  
200  
85/2.2Note  
Unit  
mW  
W
Remark  
Cathode  
Indication  
P
0.3TYP.  
P
RSM  
tT = 10 μs  
0.9 0.1  
+0.1  
0.05  
Tj  
150  
°C  
0.15  
0 to 0.1  
Tstg  
55 to +150  
°C  
Note Applicable to NNCD6.8MDT.  
3
2
1
Equivalent  
circuit  
diagram  
2
1
Product Specification Outline *Under development  
Breakdown Voltage  
Capacitance  
ESD Voltage  
(kV)  
VBR (V)  
Ct (pF)  
Product Name  
Typ.  
6.8  
18  
20  
27  
36  
8
Typ.  
8
Conditions  
Min.  
Conditions  
NNCD6.8MDT  
NNCD18DT  
NNCD20DT  
NNCD27DT  
NNCD36DT  
NNCD6.8ST  
NNCD18ST  
NNCD27ST  
30  
30  
30  
15  
12  
30  
30  
15  
20  
20  
15  
12  
50  
20  
15  
VR  
= 0 V  
C = 150 pF,  
f = 1 MHz  
R = 330 Ω  
20  
31  
NEC Electronics  
Website: www.necel.com  

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