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NNCD11F-T2B-A PDF预览

NNCD11F-T2B-A

更新时间： 2024-01-20 00:50:11
品牌 Logo 应用领域
瑞萨 - RENESAS 二极管
页数 文件大小 规格书
10页 163K
描述
TRANSIENT SUPPRESSOR DIODE,DUAL,UNIDIRECTIONAL,CENTER-TAPPED,SC-59

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中文翻译

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NNCD11F-T2B-A 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.84
击穿电压标称值：11 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
极性：UNIDIRECTIONAL子类别：Transient Suppressors
表面贴装：YESBase Number Matches：1

NNCD11F-T2B-A 数据手册

 浏览型号NNCD11F-T2B-A的Datasheet PDF文件第4页浏览型号NNCD11F-T2B-A的Datasheet PDF文件第5页浏览型号NNCD11F-T2B-A的Datasheet PDF文件第6页浏览型号NNCD11F-T2B-A的Datasheet PDF文件第7页浏览型号NNCD11F-T2B-A的Datasheet PDF文件第8页浏览型号NNCD11F-T2B-A的Datasheet PDF文件第9页 
NNCD3.3F to NNCD12F  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96.5  
1...78910

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与NNCD11F-T2B-A相关器件

型号 品牌 获取价格 描述 数据表
NNCD12A NEC

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 		ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE
NNCD12A-AZ RENESAS

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 		100W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-34
NNCD12A-T1-AZ RENESAS

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 		NNCD12A-T1-AZ
NNCD12B NEC

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 		ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE
NNCD12B-AZ RENESAS

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 		Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35
NNCD12C NEC

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 		ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE
NNCD12C-A NEC

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 		Trans Voltage Suppressor Diode, 85W, Unidirectional, 1 Element, Silicon, ULTRA SUPER MINIM
NNCD12C-T1 NEC

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 		85W, UNIDIRECTIONAL, SILICON, TVS DIODE, ULTRA SUPER MINIMOLD PACKAGE-2
NNCD12C-T2 RENESAS

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 		Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, ULTRA SUPER MINIMOLD P
NNCD12C-T2 NEC

获取价格

 		Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, ULTRA SUPER MINIMOLD P

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