Datasheet > NMB2227A

NMB2227A

更新时间： 2024-10-01 11:13:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
17页	722K
描述
40 V, 600 mA NPN/PNP general-purpose transistorsProduction

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NMB2227A 数据手册

NMB2227A

40 V, 600 mA NPN/PNP general-purpose transistors

15 September 2016

Product data sheet

1. General description

NPN/PNP general-purpose transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)

plastic package.

2. Features and benefits

•

General-purpose transistor

High current

•

Reduces component count on Printed-Circuit Board (PCB)

Reduces pick and place costs

AEC-Q101 qualified

3. Applications

•

General-purpose switching and amplification

Complementary driver

Half-bridge and full-bridge driver

4. Quick reference data

Table 1. Quick reference data

Symbol

TR1 (NPN)

V_CEO

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter

voltage

open base

h_FE

DC current gain

V_CE= 10 V; I_C= 150 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02 ; T_amb= 25 °C

100

300

TR2 (PNP)

V_CEO

collector-emitter

voltage

open base

-60

h_FE

DC current gain

V_CE= -10 V; I_C= -150 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02 ; T_amb= 25 °C

100

300

Per transistor; for the PNP transistor with negative polarity

I_Ccollector current

600

12 3 4 5 6 7...17

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