5秒后页面跳转
NJD2873T4G PDF预览

NJD2873T4G

更新时间: 2024-09-24 22:14:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 54K
描述
NPN Silicon DPAK For Surface Mount Applications

NJD2873T4G 数据手册

 浏览型号NJD2873T4G的Datasheet PDF文件第2页浏览型号NJD2873T4G的Datasheet PDF文件第3页浏览型号NJD2873T4G的Datasheet PDF文件第4页浏览型号NJD2873T4G的Datasheet PDF文件第5页浏览型号NJD2873T4G的Datasheet PDF文件第6页 
NJD2873T4  
Plastic Power Transistors  
NPN Silicon DPAK For Surface Mount  
Applications  
Designed for high−gain audio amplifier applications.  
http://onsemi.com  
Features  
Pb−Free Package is Available  
High DC Current Gain −  
SILICON  
POWER TRANSISTORS  
2 AMPERES  
h
= 120 (Min) @ I = 500 mA  
FE  
C
= 40 (Min) @ I = 2 A  
C
50 VOLTS  
12.5 WATTS  
Low Collector−Emitter Saturation Voltage −  
= 0.3 Vdc (Max) @ I = 1 A  
V
CE(sat)  
C
High Current−Gain − Bandwidth Product −  
f = 65 MHz (Min) @ I = 100 mA  
T
C
MARKING  
DIAGRAM  
Epoxy Meets UL 94 V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
4
YWW  
J
2873  
DPAK  
CASE 369C  
STYLE 1  
MAXIMUM RATINGS  
2
1
3
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CB  
V
CEO  
50  
Y
WW  
= Year  
= Work Week  
V
EB  
5
Continuous  
Peak  
I
C
2
3
ORDERING INFORMATION  
Base Current  
I
B
0.4  
Adc  
Device  
Package  
Shipping  
Total Device Dissipation @ T = 25°C  
P
12.5  
0.1  
W
W/°C  
C
D
Derate above 25°C  
NJD2873T4  
DPAK  
2500 Units / Reel  
2500 Units / Reel  
Total Device Dissipation @ T = 25°C*  
P
D
1.4  
0.011  
W
W/°C  
A
NJD2873T4G  
DPAK  
(Pb−Free)  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
+150  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance Junction−to−Case  
R
R
10  
89.3  
°C/W  
q
q
JC  
JA  
Junction−to−Ambient*  
*These ratings are applicable when surface mounted on the minimum pad sizes  
recommended.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 3  
NJD2873T4/D  

NJD2873T4G 替代型号

型号 品牌 替代类型 描述 数据表
NJD2873RLG ONSEMI

类似代替

Plastic Power Transistors
NJD2873RL ONSEMI

类似代替

Plastic Power Transistors
NJD2873T4 ONSEMI

类似代替

NPN Silicon DPAK For Surface Mount Applications

与NJD2873T4G相关器件

型号 品牌 获取价格 描述 数据表
NJD35N04G ONSEMI

获取价格

NPN Darlington Power Transistor
NJD35N04G_10 ONSEMI

获取价格

NPN Darlington Power Transistor
NJD35N04T4G ONSEMI

获取价格

NPN Darlington Power Transistor
NJD6506S ETC

获取价格

TRANSISTOR | BJT | ARRAY | COMM EMITTER | 20V V(BR)CEO | 200MA I(C) | SIP
NJD6507S ETC

获取价格

TRANSISTOR | BJT | ARRAY | COMM EMITTER | 20V V(BR)CEO | 200MA I(C) | SIP
NJD6511 NJRC

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 7-Element, NPN, Silicon
NJD6511D ETC

获取价格

Septuple Peripheral Driver
NJD6512 NJRC

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 7-Element, NPN, Silicon
NJD6512D ETC

获取价格

Septuple Peripheral Driver
NJD6513 NJRC

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 7-Element, NPN, Silicon