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NGA-486 PDF预览

NGA-486

更新时间: 2024-11-21 03:46:35
品牌 Logo 应用领域
SIRENZA 放大器
页数 文件大小 规格书
5页 392K
描述
DC-5 GHz, Cascadable InGap/GaAS HBT MMIC Amplifier

NGA-486 数据手册

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NGA-486  
Product Description  
DC-5 GHz, Cascadable  
Sirenza Microdevices’ NGA-486 is a high performance InGaP/  
GaAs Heterojunction Bipolar Transistor MMIC Amplifierꢀ A  
Darlington configuration designed with InGaP process  
technology provides broadband performance up to 5 GHz with  
excellent thermal perfomanceꢀ The heterojunction increases  
breakdown voltage and minimizes leakage current between  
junctionsꢀ Cancellation of emitter junction non-linearities results  
in higher suppression of intermodulation productsꢀ At 850 Mhz  
and 80mA , the NGA-486 typically provides +39ꢀ5 dBm output  
IP3, 14ꢀ8 dB of gain, and +19 dBm of 1dB compressed power  
using a single positive voltage supplyꢀ Only 2 DC-blocking  
capacitors, a bias resistor and an optional RF choke are required  
for operationꢀ  
InGaP/GaAs HBT MMIC Amplifier  
OBSOLETE  
See Application NoteAN-059 for Alternates  
Product Features  
• High Gain : 14ꢀ1 dB at 1950 MHz  
• Cascadable 50 Ohm  
Gain & Return Loss vs. Freq. @TL=+25°C  
• Patented InGaP Technology  
• Operates From Single Supply  
• Low Thermal Resistance Package  
16  
12  
8
0
GAIN  
ORL  
-10  
-20  
-30  
-40  
IRL  
Applications  
• PA Driver Amplifier  
• Cellular, PCS, GSM, UMTS  
• IF Amplifier  
4
0
• Wireless Data, Satellite  
0
1
2
3
4
5
6
Frequency (GHz)  
Symbol  
Parameter  
Small Signal Gain  
Units  
Frequency  
Minꢀ  
Typꢀ  
Maxꢀ  
850 MHz  
1950 MHz  
2400 MHz  
13ꢀ3  
14ꢀ8  
14ꢀ1  
13ꢀ5  
16ꢀ3  
G
dB  
850 MHz  
1950 MHz  
19ꢀ0  
18ꢀ2  
P1dB  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
dBm  
dBm  
850 MHz  
1950 MHz  
39ꢀ5  
34ꢀ0  
OIP3  
Bandwidth  
IRL  
Determined by Return Loss (>10dB)  
Input Return Loss  
MHz  
dB  
dB  
dB  
V
5000  
14ꢀ5  
15ꢀ5  
4ꢀ0  
1950 MHz  
1950 MHz  
1950 MHz  
ORL  
Output Return Loss  
NF  
Noise Figure  
Device Operating Voltage  
4ꢀ5  
75  
4ꢀ8  
5ꢀ2  
88  
VD  
Device Operating Current  
mA  
80  
ID  
Thermal Resistance (junction to lead)  
°C/W  
145  
RTH, j-l  
Test Conditions:  
VS = 8 V  
ID = 80 mA Typꢀ  
TL = 25ºC  
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm  
ZS = ZL = 50 Ohms  
RBIAS = 39 Ohms  
The information provided herein is believed to be reliable at press timeꢀ Sirenza Microdevices assumes no responsibility for inaccuracies or omissionsꢀ Sirenza Microdevices assumes no responsibility for the use of  
this information, and all such information shall be entirely at the user’s own riskꢀ Prices and specifications are subject to change without noticeꢀ No patent rights or licenses to any of the circuits described herein are  
implied or granted to any third partyꢀ Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systemsꢀ Copyright 2001 Sirenza Microdevices, Incꢀꢀ  
All worldwide rights reservedꢀ  
522 Almanor Aveꢀ, Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
http://wwwꢀsirenzaꢀcom  
EDS-101104 Revꢀ OBS  
1

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