Datasheet > NGA-486

NGA-486

更新时间： 2024-02-16 22:47:57

品牌	Logo	应用领域
SIRENZA		放大器
页数	文件大小	规格书
5页	392K
描述
DC-5 GHz, Cascadable InGap/GaAS HBT MMIC Amplifier

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NGA-486 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SL,4GW-LD,.085CIR	Reach Compliance Code：	unknown
风险等级：	5.92	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	13.3 dB
最大输入功率 (CW)：	15 dBm	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	4
最大工作频率：	5000 MHz	最小工作频率：
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SL,4GW-LD,.085CIR
电源：	4.8 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	88 mA
表面贴装：	YES	技术：	BIPOLAR
最大电压驻波比：	1.2	Base Number Matches：	1

NGA-486 数据手册

NGA-486

Product Description

DC-5 GHz, Cascadable

Sirenza Microdevices NGA-486 is a high performance InGaP/

GaAs Heterojunction Bipolar Transistor MMIC Amplifierꢀ A

Darlington configuration designed with InGaP process

technology provides broadband performance up to 5 GHz with

excellent thermal perfomanceꢀ The heterojunction increases

breakdown voltage and minimizes leakage current between

junctionsꢀ Cancellation of emitter junction non-linearities results

in higher suppression of intermodulation productsꢀ At 850 Mhz

and 80mA , the NGA-486 typically provides +39ꢀ5 dBm output

IP3, 14ꢀ8 dB of gain, and +19 dBm of 1dB compressed power

using a single positive voltage supplyꢀ Only 2 DC-blocking

capacitors, a bias resistor and an optional RF choke are required

for operationꢀ

InGaP/GaAs HBT MMIC Amplifier

OBSOLETE

See Application NoteAN-059 for Alternates

Product Features

High Gain : 14ꢀ1 dB at 1950 MHz

Cascadable 50 Ohm

Gain & Return Loss vs. Freq. @T_L=+25°C

Patented InGaP Technology

Operates From Single Supply

Low Thermal Resistance Package

GAIN

ORL

-10

-20

-30

-40

IRL

Applications

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

Wireless Data, Satellite

Frequency (GHz)

Symbol

Parameter

Small Signal Gain

Units

Frequency

Minꢀ

Typꢀ

Maxꢀ

850 MHz

1950 MHz

2400 MHz

13ꢀ3

14ꢀ8

14ꢀ1

13ꢀ5

16ꢀ3

850 MHz

1950 MHz

19ꢀ0

18ꢀ2

P_1dB

Output Power at 1dB Compression

Output Third Order Intercept Point

dBm

850 MHz

1950 MHz

39ꢀ5

34ꢀ0

OIP₃

Bandwidth

IRL

Determined by Return Loss (>10dB)

Input Return Loss

MHz

5000

14ꢀ5

15ꢀ5

4ꢀ0

1950 MHz

ORL

Output Return Loss

Noise Figure

Device Operating Voltage

4ꢀ5

4ꢀ8

5ꢀ2

V_D

Device Operating Current

I_D

Thermal Resistance (junction to lead)

°C/W

145

R_TH, j-l

Test Conditions:

V_S= 8 V

I_D= 80 mA Typꢀ

T_L= 25ºC

OIP₃Tone Spacing = 1 MHz, Pout per tone = 0 dBm

Z_S= Z_L= 50 Ohms

R_BIAS= 39 Ohms

The information provided herein is believed to be reliable at press timeꢀ Sirenza Microdevices assumes no responsibility for inaccuracies or omissionsꢀ Sirenza Microdevices assumes no responsibility for the use of

this information, and all such information shall be entirely at the users own riskꢀ Prices and specifications are subject to change without noticeꢀ No patent rights or licenses to any of the circuits described herein are

implied or granted to any third partyꢀ Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systemsꢀ Copyright 2001 Sirenza Microdevices, Incꢀꢀ

All worldwide rights reservedꢀ

522 Almanor Aveꢀ, Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://wwwꢀsirenzaꢀcom

EDS-101104 Revꢀ OBS

12 3 4 5

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