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NFP2033 PDF预览

NFP2033

更新时间: 2024-11-26 14:54:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 放大器晶体管
页数 文件大小 规格书
2页 28K
描述
Power Bipolar Transistor, 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FP-3

NFP2033 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
风险等级:5.92Is Samacsys:N
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PSSO-F3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):15 MHz
Base Number Matches:1

NFP2033 数据手册

 浏览型号NFP2033的Datasheet PDF文件第2页 
T
ECHNICAL
D
ATA  
1 AMPERE  
NPN  
NFP2033  
SURFACE MOUNT  
3 Pin Flat Pack  
HIGH VOLTAGE NPN TRANSISTOR  
SURFACE MOUNT AMPLIFIER  
MAXIMUM RATINGS  
RATINGS  
Collector-Emitter Voltage  
SYMBOL  
VCEO  
VCBO  
VEBO  
IC  
NFP2033  
350  
UNITS  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current – Peak  
400  
6.0  
1.0  
(1)  
Base Current -- Continuous  
IB  
PD  
0.5  
Adc  
Total Power Dissipation @ TC = 250C  
W
Derate above 250C  
Operating & Storage Junction Temperature Range  
THERMAL CHARACTERISTICS  
CHARACTERISTICS  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Free-Air  
TBD  
-65 to +200  
mW/0C  
TJ, Tstg  
0C  
SYMBOL  
RqJC  
MAX.  
TBD  
TBD  
UNITS  
0C\W  
0C\W  
RqJA  
(1) Pulse Test: Pulse Width = 10ms, Duty Cycle £ 10%  
MECHANICAL OUTLINE  
6 Lake Street, Lawrence, MA 01841  
REV: A  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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