NEZ1011-4E

更新时间： 2024-02-29 22:37:38

品牌	Logo	应用领域
日电电子 - NEC		晶体射频场效应晶体管局域网
页数	文件大小	规格书
12页	82K
描述
4W X, Ku-BAND POWER GaAs MESFET

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中文翻译

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技术参数
数据手册

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NEZ1011-4E 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大漏极电流 (Abs) (ID)：	4.5 A	FET 技术：	METAL SEMICONDUCTOR
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
功耗环境最大值：	30 W	子类别：	Other Transistors
Base Number Matches：	1

NEZ1011-4E 数据手册

DATA SHEET

N-CHANNEL GaAs MESFET

NEZ1011-4E, NEZ1414-4E

4W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION

The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high

output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The

device incorporates a WSi (tungsten silicide) gate structure for high reliability.

FEATURES

•

High Output Power : P^{o (1 dB)}= +36.5 dBm typ.

High Linear Gain : 8.0 dB typ. (NEZ1011-4E), 7.0 dB typ. (NEZ1414-4E)

High Efficiency

: 30 % typ.

Input and Output Internally Matched for Optimum performance

ORDERING INFORMATION

Part Number

Package

NEZ1011-4E

NEZ1414-4E

T-78

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NEZ1011-4E, NEZ1414-4E)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

Ratings

Unit

V^GS

–7

I^DS

4.5 (NEZ1011-4E)

5.0 (NEZ1414-4E)

Gate Forward Current

Gate Reverse Current

Total Power Dissipation

Channel Temperature

Storage Temperature

I^GF

I^GR

P^T

+40

–40

T^ch

T^stg

175

°C

–65 to +175

°C

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

The information in this document is subject to change without notice.

Document No. P13729EJ1V0DS00 (1st edition)

Date Published September 1998 N CP(K)

Printed in Japan

1998

12 3 4 5 6 7...12

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与NEZ1011-4E相关器件

型号	品牌	描述	获取价格	数据表
NEZ1011-5E	RENESAS	KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET	获取价格
NEZ1011-5E	NEC	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal S	获取价格
NEZ1011-8E	NEC	8W X, Ku-BAND POWER GaAs MESFET	获取价格
NEZ1414-2E	NEC	2W X, Ku-BAND POWER GaAs MESFET	获取价格
NEZ1414-3E	NEC	N-CHANNEL GaAs MESFET	获取价格
NEZ1414-4E	NEC	4W X, Ku-BAND POWER GaAs MESFET	获取价格