5秒后页面跳转
NE5500234 PDF预览

NE5500234

更新时间: 2024-09-25 14:54:11
品牌 Logo 应用领域
日电电子 - NEC 放大器晶体管
页数 文件大小 规格书
7页 69K
描述
Power Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD PACKAGE-3

NE5500234 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:POWER, MINIMOLD PACKAGE-3Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:20 V最大漏极电流 (ID):1 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-F3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

NE5500234 数据手册

 浏览型号NE5500234的Datasheet PDF文件第2页浏览型号NE5500234的Datasheet PDF文件第3页浏览型号NE5500234的Datasheet PDF文件第4页浏览型号NE5500234的Datasheet PDF文件第5页浏览型号NE5500234的Datasheet PDF文件第6页浏览型号NE5500234的Datasheet PDF文件第7页 
DATA SHEET  
SILICON POWER MOS FET  
NE5500234  
N-CHANNEL SILICON POWER MOS FET  
POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS  
DESCRIPTION  
The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier  
for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate  
lateral MOS FET), housed in a surface mount 3-pin power Minimold (34 PKG) (SOT-89 type) package. The device  
can deliver 32.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 4.8 V supply voltage.  
FEATURES  
High output power  
: Pout = 32.5 dBm TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz, Pin = 25 dBm)  
High power added efficiency : ηadd = 50% TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz, Pin = 25 dBm)  
High linear gain  
: GL = 11 dB TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz)  
: 3-pin power Minimold (34 PKG) (SOT-89 type)  
: VDS = 3.0 to 6.0 V  
Surface mount package  
Single supply  
APPLICATIONS  
Digital cellular phones  
Handheld transceiver  
Others  
: DCS1800/PCS1900 handsets  
: FRS (Family Radio Service), GMRS (General Mobile Radio Service)  
: General purpose amplifiers for various applications  
<R>  
<R>  
ORDERING INFORMATION  
Part Number  
NE5500234  
Order Number  
NE5500234-AZ  
Package  
Marking  
V2  
Supplying Form  
3-pin power minimold  
(SOT-89, Our code: 34)  
(Pb-Free : External  
solder plating)  
• Magazine case  
• Qty 25 pcs/case  
NE5500234-T1 NE5500234-T1-AZ  
3-pin power minimold  
(SOT-89, Our code: 34)  
(Pb-Free : External  
solder plating)  
• 12 mm wide embossed taping  
• Source pin face the perforation side of the tape  
• Qty 1 kpcs/reel  
Remarks 1. To order evaluation samples, contact your nearby sales office.  
Part number for sample order: NE5500234  
2. This product is containing Pb-material inside.  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. PU10405EJ02V0DS (2nd edition)  
Date Published August 2007 NS  
Printed in Japan  
2004, 2007  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

与NE5500234相关器件

型号 品牌 获取价格 描述 数据表
NE5500234-A RENESAS

获取价格

RF & Microwave device
NE5500234-AZ RENESAS

获取价格

NE5500234-AZ
NE5500234-AZ NEC

获取价格

Power Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Se
NE5500234-T1-AZ RENESAS

获取价格

NE5500234-T1-AZ
NE5500234-T1-AZ NEC

获取价格

Power Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Se
NE5500434-A RENESAS

获取价格

RF & Microwave device
NE5500434-AZ RENESAS

获取价格

NE5500434-AZ
NE5500434-T1-AZ RENESAS

获取价格

NE5500434-T1-AZ
NE5500479A ETC

获取价格

Discrete
NE5500479A-T1 NEC

获取价格

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel