Datasheet > 晶体管 > 射频场效应晶体管> NE5510179A-T1

NE5510179A-T1

更新时间： 2024-02-04 04:21:16

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器射频场效应晶体管
页数	文件大小	规格书
4页	42K
描述
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS

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技术参数
数据手册

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NE5510179A-T1 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.84
外壳连接：	SOURCE	配置：	SINGLE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	0.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	L BAND
JESD-30 代码：	R-PQMW-F4	湿度敏感等级：	1
元件数量：	1	端子数量：	4
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	MICROWAVE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	QUAD
处于峰值回流温度下的最长时间：	10	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON

NE5510179A-T1 数据手册

PRELIMINARY DATA SHEET

3.5 V OPERATION SILICON

RF POWER MOSFET FOR 1.9 GHZ

TRANSMISSION AMPLIFIERS

NE5510179A

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• HIGH OUTPUT POWER: 29.5 dBm TYP

VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm

PACKAGE OUTLINE 79A

• HIGH LINEAR GAIN: 11 dB TYP

VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm

1.5 – 0.2

4.2 Max

Source

• HIGH POWER ADDED EFFICIENCY: 50% TYP

VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm

Source

Drain

Gate

• SINGLE SUPPLY: 2.8 to 6.0 V

• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

0.4 – 0.15

5.7 Max

0.8 Max

3.6 – 0.2

DESCRIPTION

APPLICATIONS

The NE5510179A is an N-Channel silicon power MOSFET

specially designed as the transmission driver amplifier for 3.5

V GSM1800 and GSM 1900 handsets. Dies are manufactured

using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate

lateral MOSFET) and housed in a surface mount package.

This device can deliver 29.5 dBm output power with 50% power

added efficiency at 1.9 GHz under the 3.5 V supply voltage,

or can deliver 29 dBm output power at 2.8 V by varying the

gate voltage as a power control function.

• DIGITAL CELLULAR PHONES:

3.5 V GSM 1800/GSM 1900 Class 1 Handsets

• OTHERS:

1.6 - 2.0 GHz TDMA Applications

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE5510179A

PACKAGE OUTLINE

79A

TYP

SYMBOLS

IGSS

CHARACTERISTICS

Gate-to-Source Leakage Current

Drain-to-Source Leakage Current

Gate Threshold Voltage

UNITS

MIN

1.0

MAX

100

2.0

TEST CONDITIONS

VGSS = 6.0 V

IDSS

VDSS = 8.5 V

VTH

1.35

0.82

0.5

VDS = 3.5 V, IDS = 1 mA

Transconductance

VDS = 3.5 V, IDS1 = 300 mA, IDS2 = 500 mA

VGS = 6.0 V, VDS = 0.5 V

IDSS = 10 A

RDS (ON)

BVDSS

Drain-to-Source On Resistance

Drain-to-Source Breakdown Voltage

California Eastern Laboratories

12 3 4

中文翻译

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