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NE5500479A-T1 PDF预览

NE5500479A-T1

更新时间： 2024-11-12 14:38:19
品牌 Logo 应用领域
日电电子 - NEC 放大器晶体管
页数 文件大小 规格书
9页 57K
描述
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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NE5500479A-T1 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：MICROWAVE, R-PQMW-F4Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.75
风险等级：5.05外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：20 V
最大漏极电流 (ID)：1 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PQMW-F4
JESD-609代码：e0元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：MICROWAVE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：FLAT端子位置：QUAD
处于峰值回流温度下的最长时间：10晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

NE5500479A-T1 数据手册

 浏览型号NE5500479A-T1的Datasheet PDF文件第2页浏览型号NE5500479A-T1的Datasheet PDF文件第3页浏览型号NE5500479A-T1的Datasheet PDF文件第4页浏览型号NE5500479A-T1的Datasheet PDF文件第5页浏览型号NE5500479A-T1的Datasheet PDF文件第6页浏览型号NE5500479A-T1的Datasheet PDF文件第7页 
DATA SHEET  
SILICON POWER MOS FET  
NE5500479A  
3.5 V OPERATION SILICON RF POWER LDMOS FET  
FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS  
DESCRIPTION  
The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier  
for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate laterally diffused  
MOS FET) and housed in a surface mount package. The device can deliver 31.5 dBm output power with 62% power  
added efficiency at 900 MHz as AMPS final output stage amplifier under the 3.5 V supply voltage. It also can deliver  
35 dBm output power with 62% power added efficiency at 4.8 V, as GSM 900 class 4 final stage amplifiers.  
FEATURES  
•
•
•
•
•
High output power  
: Pout = 31.5 dBm TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 20 dBm)  
High power added efficiency : ηadd = 62% TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 20 dBm)  
High linear gain  
: GL = 15.0 dB TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm)  
: 5.7 × 5.7 × 1.1 mm MAX.  
Surface mount package  
Single supply  
: VDS = 3.0 to 8.0 V  
APPLICATIONS  
•
•
•
Analog cellular phones : 3.5 V AMPS handsets  
Digital cellular phones : 4.8 V GSM 900 class 4 handsets  
Others : General purpose amplifiers for 800 to 1 000 MHz TDMA applications  
ORDERING INFORMATION  
Part Number  
Package  
79A  
Marking  
R4  
Supplying Form  
• 12 mm wide embossed taping  
NE5500479A-T1  
• Gate pin face the perforation side of the tape  
• Qty 1 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: NE5500479A  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10119EJ03V0DS (3rd edition)  
Date Published July 2003 CP(K)  
Printed in Japan  
The mark  shows major revised points.  
NEC Compound Semiconductor Devices 1999, 2003  
1234567...9

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