是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | HVSON, SOLCC6,.08,25 | Reach Compliance Code: | compliant |
Factory Lead Time: | 4 weeks | 风险等级: | 1.58 |
Samacsys Description: | LDO Regulator with Bias Rail & Very Low Dropout, 350 mA 1.80 V, Wettable Flank | 可调性: | FIXED |
最大回动电压 1: | 0.2 V | 标称回动电压 1: | 0.11 V |
最大绝对输入电压: | 6 V | 最大输入电压: | 4.5 V |
最小输入电压: | 2.3 V | JESD-30 代码: | S-PDSO-N6 |
JESD-609代码: | e3 | 长度: | 2 mm |
湿度敏感等级: | 1 | 功能数量: | 1 |
输出次数: | 1 | 端子数量: | 6 |
工作温度TJ-Max: | 125 °C | 工作温度TJ-Min: | -40 °C |
最大输出电流 1: | 0.35 A | 最大输出电压 1: | 1.836 V |
最小输出电压 1: | 1.764 V | 标称输出电压 1: | 1.8 V |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVSON |
封装等效代码: | SOLCC6,.08,25 | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 包装方法: | TR |
峰值回流温度(摄氏度): | 260 | 调节器类型: | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR |
筛选级别: | AEC-Q100 | 座面最大高度: | 0.8 mm |
表面贴装: | YES | 技术: | CMOS |
端子面层: | Tin (Sn) | 端子形式: | NO LEAD |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 最大电压容差: | 2% |
宽度: | 2 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NCV8730 | ONSEMI |
获取价格 |
LDO Regulator, 150 mA, 38V, 1 A IQ, with PG | |
NCV8730ASN180T1G | ONSEMI |
获取价格 |
LDO Regulator, 150 mA, 38V, 1 A IQ, with PG | |
NCV8730ASN330T1G | ONSEMI |
获取价格 |
LDO Regulator, 150 mA, 38V, 1 A IQ, with PG | |
NCV8730ASN500T1G | ONSEMI |
获取价格 |
LDO Regulator, 150 mA, 38V, 1 A IQ, with PG | |
NCV8730ASNADJT1G | ONSEMI |
获取价格 |
LDO Regulator, 150 mA, 38V, 1 A IQ, with PG | |
NCV8730BMTW1500TBG | ONSEMI |
获取价格 |
LDO Regulator, 150 mA, 38V, 1 A IQ, with PG | |
NCV8730BMTW330TBG | ONSEMI |
获取价格 |
LDO Regulator, 150 mA, 38V, 1 A IQ, with PG | |
NCV8730BMTW500TBG | ONSEMI |
获取价格 |
LDO Regulator, 150 mA, 38V, 1 A IQ, with PG | |
NCV8730BMTWADJTBG | ONSEMI |
获取价格 |
LDO Regulator, 150 mA, 38V, 1 A IQ, with PG | |
NCV8752 | ONSEMI |
获取价格 |
200 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, Low Dropout Regulator |