是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | HVSON, SOLCC14,.12,20 | Reach Compliance Code: | compliant |
Factory Lead Time: | 28 weeks 6 days | 风险等级: | 5.71 |
模拟集成电路 - 其他类型: | SWITCHING REGULATOR | 控制模式: | VOLTAGE-MODE |
控制技术: | PULSE WIDTH MODULATION | 最大输入电压: | 5.5 V |
最小输入电压: | 2.5 V | 标称输入电压: | 3.3 V |
JESD-30 代码: | R-PDSO-N14 | JESD-609代码: | e3 |
长度: | 4 mm | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 14 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVSON |
封装等效代码: | SOLCC14,.12,20 | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
筛选级别: | AEC-Q100 | 座面最大高度: | 0.8 mm |
最大供电电流 (Isup): | 25 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 切换器配置: | BUCK |
最大切换频率: | 2640 kHz | 温度等级: | AUTOMOTIVE |
端子面层: | Tin (Sn) | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 3 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NCV6357MTWFTXG | ONSEMI |
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Switching Regulator | |
NCV662 | ONSEMI |
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100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV662SQ15T1 | ONSEMI |
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100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV662SQ15T1G | ONSEMI |
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100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV662SQ15T1G | ROCHESTER |
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1.5V FIXED POSITIVE LDO REGULATOR, 0.95V DROPOUT, PDSO4, LEAD FREE, SC-82AB, SC-70, 4 PIN | |
NCV662SQ18T1 | ONSEMI |
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100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV662SQ18T1G | ONSEMI |
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100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV662SQ18T1G | ROCHESTER |
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1.8V FIXED POSITIVE LDO REGULATOR, 0.7V DROPOUT, PDSO4, LEAD FREE, SC-82AB, SC-70, 4 PIN | |
NCV662SQ25T1 | ONSEMI |
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100 mA CMOS Low Iq Low-Dropout Voltage Regulator | |
NCV662SQ25T1G | ONSEMI |
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100 mA CMOS Low Iq Low-Dropout Voltage Regulator |