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NCR169DG PDF预览

NCR169DG

更新时间: 2024-01-03 09:11:25
品牌 Logo 应用领域
安森美 - ONSEMI
页数 文件大小 规格书
8页 70K
描述
General Purpose Sensitive Gate Silicon Controlled Rectifier

NCR169DG 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-92包装说明:LEAD FREE, PLASTIC, CASE 029-11, TO-226AA, 3 PIN
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.69
Is Samacsys:N配置:SINGLE
最大直流栅极触发电流:0.2 mAJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:0.8 A
断态重复峰值电压:400 V重复峰值反向电压:400 V
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

NCR169DG 数据手册

 浏览型号NCR169DG的Datasheet PDF文件第1页浏览型号NCR169DG的Datasheet PDF文件第2页浏览型号NCR169DG的Datasheet PDF文件第4页浏览型号NCR169DG的Datasheet PDF文件第5页浏览型号NCR169DG的Datasheet PDF文件第6页浏览型号NCR169DG的Datasheet PDF文件第7页 
NCR169D  
Voltage Current Characteristic of SCR  
+ Current  
Anode +  
V
TM  
Symbol  
Parameter  
V
Peak Repetitive Off State Forward Voltage  
Peak Forward Blocking Current  
Peak Repetitive Off State Reverse Voltage  
Peak Reverse Blocking Current  
Peak on State Voltage  
DRM  
DRM  
on state  
I
I
H
I
at V  
RRM  
RRM  
V
RRM  
RRM  
I
V
TM  
+ Voltage  
I
H
Holding Current  
I
at V  
DRM  
Reverse Blocking Region  
(off state)  
DRM  
Forward Blocking Region  
(off state)  
Reverse Avalanche Region  
Anode −  
100  
90  
1.0  
0.9  
0.8  
80  
70  
60  
50  
40  
30  
0.7  
0.6  
0.5  
0.4  
0.3  
20  
10  
0.2  
−40 −25 −10  
5
20 35 50 65 80 95 110  
−40 −25 −10  
5
20 35 50  
65 80 95 110  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 1. Typical Gate Trigger Current versus  
Junction Temperature  
Figure 2. Typical Gate Trigger Voltage versus  
Junction Temperature  
http://onsemi.com  
3

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