NCE6080EK
http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
RθJA
1.36
60
℃/W
℃/W
Thermal Resistance,Junction-to-Ambient(Note 2)
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
BVDSS
IDSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60
-
-
-
-
-
1
V
μA
nA
IGSS
-
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VDS=5V,ID=20A
2
-
2.8
6
4
6.9
-
V
mΩ
S
20
-
Clss
Coss
Crss
-
-
-
4000
290
-
-
-
PF
PF
PF
VDS=30V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
210
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
8.5
7
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=30V,RL=1Ω
VGS=10V,RG=3Ω
Turn-Off Delay Time
40
15
90
9
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=30V,ID=20A,
VGS=10V
Gate-Source Charge
Gate-Drain Charge
18
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=20A
-
-
-
-
1.2
80
-
V
A
-
trr
32
45
nS
nC
TJ = 25°C, IF = 20A
di/dt = 100A/μs(Note3)
Reverse Recovery Charge
Forward Turn-On Time
Qrr
ton
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=20V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Co., Ltd
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