Datasheet > NCE4015S

NCE4015S

更新时间： 2024-04-09 19:00:39

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	613K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE4015S 数据手册

NCE4015S

http://www.ncepower.com

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics ^{(Note 3)}

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=40V,V_GS=0V

V_GS=±20V,V_DS=0V

μA

I_GSS

±100

Gate Threshold Voltage

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=10A

V_GS=4.5V, I_D=8A

V_DS=5V,I_D=10A

1.2

1.8

6.1

2.5

8.2

mΩ

Drain-Source On-State Resistance

11.4

Forward Transconductance

Dynamic Characteristics ^(Note4)

Input Capacitance

C_lss

C_oss

C_rss

3090

328

V_DS=20V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 4)}

Turn-on Delay Time

273

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=20V, R_L=2Ω

V_GS=10V,R_G=3Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

V_DS=20V,I_D=10A,

V_GS=10V

Gate-Source Charge

8.1

16.9

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage ^{(Note 3)}

Diode Forward Current ^{(Note 2)}

Reverse Recovery Time

V_SD

I_S

V_GS=0V,I_S=10A

1.2

t_rr

TJ = 25°C, IF = 10A

di/dt = 100A/μs^(Note3)

Reverse Recovery Charge

Qrr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

Wuxi NCE Power Co., Ltd

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