Datasheet > NAND02GW4B2BZA1F

NAND02GW4B2BZA1F

更新时间： 2024-11-16 04:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
62页	713K
描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NAND02GW4B2BZA1F 数据手册

NAND01G-B2B

NAND02G-B2C

1 Gbit, 2 Gbit,

2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

Features

■ High Density NAND Flash memories

–

Up to 2 Gbit memory array

Cost effective solutions for mass

storage applications

■ NAND interface

TSOP48 12 x 20mm

–

x8 or x16 bus width

Multiplexed Address/ Data

Pinout compatibility for all densities

FBGA

■ Supply voltage: 1.8V/3.0V

■ Page size

VFBGA63 9.5 x 12 x 1mm

VFBGA63 9 x 11 x 1mm

–

x8 device: (2048 + 64 spare) Bytes

x16 device: (1024 + 32 spare) Words

■ Serial Number option

■ Data protection

■ Block size

–

x8 device: (128K + 4K spare) Bytes

x16 device: (64K + 2K spare) Words

–

Hardware Block Locking

Hardware Program/Erase locked during

Power transitions

■ Page Read/Program

–

Random access: 25µs (max)

■ Data integrity

Sequential access: 30ns (min)

Page program time: 200µs (typ)

–

100,000 Program/Erase cycles

10 years Data Retention

■ Copy Back Program mode

■ Cache Program and Cache Read modes

■ Fast Block Erase: 2ms (typ)

■ Status Register

■ ECOPACK packages

■ Development tools

–

Error Correction Code models

Bad Blocks Management and Wear

Leveling algorithms

■ Electronic Signature

■ Chip Enable ‘don’t care’

–

Hardware simulation models

Table 1.

Product List

Reference

Part Number

NAND01GR3B2B, NAND01GW3B2B

NAND01G-B2B

NAND02G-B2C

NAND01GR4B2B, NAND01GW4B2B⁽¹⁾

NAND02GR3B2C, NAND02GW3B2C

NAND02GR4B2C, NAND02GW4B2C⁽¹⁾

1. x16 organization only available for MCP Products.

November 2006

Rev 3

1/62

www.st.com

12 3 4 5 6 7...62

中文翻译

下载PDF

与NAND02GW4B2BZA1F相关器件

型号	品牌	获取价格	描述	数据表
NAND02GW4B2BZA6	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2BZA6E	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2BZA6E	NUMONYX	获取价格	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW4B2BZA6F	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2BZA6F	NUMONYX	获取价格	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW4B2BZB1	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2BZB1E	STMICROELECTRONICS	获取价格	128MX16 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD
NAND02GW4B2BZB1F	STMICROELECTRONICS	获取价格	暂无描述
NAND02GW4B2BZB1T	STMICROELECTRONICS	获取价格	128MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
NAND02GW4B2BZB6	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory