Datasheet > 存储 > 闪存> NAND01GW3B2BZA1T

NAND01GW3B2BZA1T

更新时间： 2024-02-29 15:34:24

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存存储内存集成电路
页数	文件大小	规格书
64页	633K
描述
128MX8 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

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NAND01GW3B2BZA1T 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	BGA	包装说明：	9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
针数：	63	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.1	Is Samacsys：	N
最长访问时间：	35 ns	JESD-30 代码：	R-PBGA-B63
JESD-609代码：	e0	长度：	12 mm
内存密度：	1073741824 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	63	字数：	134217728 words
字数代码：	128000000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	128MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	编程电压：	3 V
认证状态：	Not Qualified	座面最大高度：	1.05 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	TIN LEAD	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	类型：	NAND TYPE
宽度：	9.5 mm	Base Number Matches：	1

NAND01GW3B2BZA1T 数据手册

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NAND01G-B, NAND02G-B

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与NAND01GW3B2BZA1T相关器件

型号	品牌	描述	获取价格	数据表
NAND01GW3B2BZA6	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BZA6E	NUMONYX	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory	获取价格
NAND01GW3B2BZA6E	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BZA6F	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BZA6F	NUMONYX	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory	获取价格
NAND01GW3B2BZA6T	STMICROELECTRONICS	Flash, 128MX8, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63	获取价格

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