Datasheet > NAND01GW3B2BV6F

NAND01GW3B2BV6F

更新时间： 2024-01-05 19:35:38

品牌	Logo	应用领域
恒忆 - NUMONYX		光电二极管
页数	文件大小	规格书
58页	943K
描述
Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48

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NAND01GW3B2BV6F 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	VSSOP,
针数：	48	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.26	最长访问时间：	25000 ns
JESD-30 代码：	R-PDSO-G48	长度：	15.4 mm
内存密度：	1073741824 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	48	字数：	134217728 words
字数代码：	128000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	128MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	VSSOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	编程电压：	3 V
认证状态：	Not Qualified	座面最大高度：	0.65 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	12 mm	Base Number Matches：	1

NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B

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型号	品牌	描述	获取价格	数据表
NAND01GW3B2BV6T	NUMONYX	128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48	获取价格
NAND01GW3B2BZA1	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BZA1E	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BZA1E	NUMONYX	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory	获取价格
NAND01GW3B2BZA1F	STMICROELECTRONICS	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory	获取价格
NAND01GW3B2BZA1F	NUMONYX	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory	获取价格