Datasheet > N93C66

N93C66

更新时间： 2024-11-17 01:21:19

品牌	Logo	应用领域
安森美 - ONSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
9页	82K
描述
4 Kb Microwire Serial CMOS EEPROM

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N93C66 数据手册

N93C66

4 Kb Microwire Serial CMOS

EEPROM

Description

The N93C66 is a 4 kb CMOS Serial EEPROM device which is

organized as either 256 registers of 16 bits (ORG pin at V ) or 512

www.onsemi.com

registers of 8 bits (ORG pin at GND). Each register can be written (or

read) serially by using the DI (or DO) pin. The device features

sequential read and self−timed internal write with auto−clear. On−chip

Power−On Reset circuitry protects the internal logic against powering

up in the wrong state.

TDFN−8

VP2 SUFFIX

CASE 511AK

Features

• High Speed Operation: 4 MHz

• 1.7 V to 5.5 V Supply Voltage Range

• Selectable x8 or x16 Memory Organization

• Sequential Read

PIN CONFIGURATION

(Top View)

• Software Write Protection

• Power−up Inadvertent Write Protection

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

ORG

GND

TDFN (VP2)

• Industrial Temperature Range

• 8−pad TDFN Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 9 of this data sheet.

• These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS

Compliant

ORG

N93C66

GND

Figure 1. Functional Symbol

N93C66 Selectable Organization:

When the ORG pin is connected to V , the x16 organization is

selected. When it is connected to ground, the x8 organization is

selected. If the ORG pin is left unconnected, then an internal pull−up

device will select the x16 organization.

Publication Order Number:

October, 2017 − Rev. 0

N93C66/D

12 3 4 5 6 7...9

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