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N20160H1TB1SE3 PDF预览

N20160H1TB1SE3

更新时间: 2024-11-20 17:12:43
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
1页 21K
描述
Rectifier Diode, 1 Phase, Silicon,

N20160H1TB1SE3 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:NBase Number Matches:1

N20160H1TB1SE3 数据手册

  

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