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N1863DH12LOO PDF预览

N1863DH12LOO

更新时间: 2024-11-24 19:49:51
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
8页 77K
描述
Silicon Controlled Rectifier, 7080A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 101A325, 3 PIN

N1863DH12LOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.84
配置:SINGLE最大直流栅极触发电流:300 mA
JESD-30 代码:O-CXDB-X3元件数量:1
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:7080 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED触发设备类型:SCR
Base Number Matches:1

N1863DH12LOO 数据手册

 浏览型号N1863DH12LOO的Datasheet PDF文件第2页浏览型号N1863DH12LOO的Datasheet PDF文件第3页浏览型号N1863DH12LOO的Datasheet PDF文件第4页浏览型号N1863DH12LOO的Datasheet PDF文件第5页浏览型号N1863DH12LOO的Datasheet PDF文件第6页浏览型号N1863DH12LOO的Datasheet PDF文件第7页 
Date : Dec-99  
Rat Rep : 99T05  
Issue 2  
WESTCODE  
Converter Thyristor  
Type N1863xx12xxx to N1863xx28xxx  
Absolute maximum ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1).  
Non-repetitive peak off-state voltage, (note 1).  
Repetitive peak reverse voltage, (note 1).  
Non-repetitive peak reverse voltage, (note 1).  
1200-2800  
1200-2800  
1200-2800  
1300-2900  
V
V
V
V
MAXIMUM  
LIMITS  
RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2).  
Mean on-state current. Tsink=85°C, (note 5).  
Mean on-state current. Tsink=85°C, (note 3).  
Nominal RMS on-state current, 25°C, (note 2).  
D.C. on-state current, 25°C, (note 7).  
3560  
A
A
2420  
1440  
A
7080  
A
6040  
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 4).  
Peak non-repetitive surge tp=10ms, VRM10V, (note 4).  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 4).  
I2t capacity for fusing tp=10ms, VRM10V, (note 4).  
I2t capacity for fusing tp=3ms, VRM0.6VRRM, (note 4).  
Critical rate of rise of on-state current (continuous), (note 6).  
Critical rate of rise of on-state current (intermittent), (note 6).  
Peak forward gate current.  
54.0×103  
64.0×103  
14.6×106  
18.0×106  
10.1×106  
150  
A
A
A2s  
A2s  
A2s  
A/µs  
A/µs  
A
I2t  
I2t  
di/dt  
300  
IFGM  
VRGM  
PG(AV)  
PGM  
VGD  
10  
Peak reverse gate voltage.  
5
V
Mean forward gate power.  
5
W
Peak forward gate power.  
30  
W
Non-trigger gate voltage, (Note 5).  
0.25  
V
THS  
Operating temperature range.  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range.  
Notes:-  
1) De-rating factor of 0.13% per K is applicable for Tj below 25°C.  
2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.  
3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.  
4) Half-sinewave, 125°C Tj initial.  
5) Rated VDRM.  
6) VD=67%VDRM, IT=6000A, IFG=2A, tr=500ns.  
7) Doubleside cooled.  
Types N1863xx12xxx to N1863xx28xxx Rat. Rep. 99T05  
page 1 of 8  
December, 1999  

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