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N170CH03 PDF预览

N170CH03

更新时间: 2024-11-26 19:43:15
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
4页 443K
描述
Silicon Controlled Rectifier, 138000mA I(T), 300V V(DRM),

N170CH03 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.23关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:150 mA最大直流栅极触发电压:3 V
最大维持电流:600 mA最大漏电流:20 mA
通态非重复峰值电流:4200 A最大通态电压:2 V
最大通态电流:138000 A最高工作温度:125 °C
最低工作温度:-40 °C断态重复峰值电压:300 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
触发设备类型:SCRBase Number Matches:1

N170CH03 数据手册

 浏览型号N170CH03的Datasheet PDF文件第2页浏览型号N170CH03的Datasheet PDF文件第3页浏览型号N170CH03的Datasheet PDF文件第4页 

与N170CH03相关器件

型号 品牌 获取价格 描述 数据表
N170CH04HOO IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 400V V(DRM), 400V V(RRM), 1 E
N170CH08 IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 138000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
N170CH08GOO IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
N170CH08KOO IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
N170CH10 IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 138000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
N170CH10GOO IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
N170CH10HOO IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
N170CH10JOO IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
N170CH10KOO IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
N170CH10LOO IXYS

获取价格

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1