Datasheet > N1283CH50H00

N1283CH50H00

更新时间： 2024-01-26 13:56:13

品牌	Logo	应用领域
力特 - LITTELFUSE		栅栅极
页数	文件大小	规格书
9页	101K
描述
Silicon Controlled Rectifier, 6620000mA I(T), 5000V V(DRM),

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技术参数
数据手册

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N1283CH50H00 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.09	关态电压最小值的临界上升速率：	400 V/us
最大直流栅极触发电流：	300 mA	最大直流栅极触发电压：	3 V
最大维持电流：	1000 mA	最大漏电流：	300 mA
通态非重复峰值电流：	49500 A	最大通态电压：	2 V
最大通态电流：	6620000 A	最高工作温度：	125 °C
最低工作温度：	-40 °C	断态重复峰值电压：	5000 V
子类别：	Silicon Controlled Rectifiers	触发设备类型：	SCR

N1283CH50H00 数据手册

Date: November, 2000

Data Sheet: 99T03

Issue: 3

WESTCODE

Provisional Data

Phase Control Thyristor

Types N1283CH43 to N1283CH52

Absolute maximum ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage (note 1)

Non-repetitive peak off-state voltage (note 1)

Repetitive peak reverse voltage (note 1)

Non-repetitive peak reverse voltage (note 1)

4300-5200

4400-5300

MAXIMUM

LIMITS

RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C (note 2)

Mean on-state current. T_sink=85°C (note 2)

Mean on-state current. T_sink=85°C (note 3)

Nominal RMS on-state current, T_sink=25°C (note 2)

D.C. on-state current, T_sink=25°C (note 4)

3764

2658

1680

7317

6620

49.5

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM(note 5)

A²s

A/µs

≤

Peak non-repetitive surge t_p=10ms, V_RM10V (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.4V_RRM(note 5)

12.25x10⁶

15.13x10⁶

150

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V (note 5)

Critical rate of rise of on-state current, repetitive (note 6)

Critical rate of rise of on-state current, non-repetitive (note 6)

Peak forward gate current

di/dt

300

I_FGM

V_RGM

P_G(AV)

P_GM

V_GD

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage (Note 7)

Operating temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67%V_DRM, I_T=5000A, I_FG=2A, t_r=500ns.

7) Rated V_DRM.

Types N1283CH43-52 Provisional Data Sheet 99T03AD Issue 3

page 1 of 9

November, 2000

12 3 4 5 6 7...9

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