Datasheet > N1283CH52HOO

N1283CH52HOO

更新时间： 2024-10-02 03:22:43

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
9页	101K
描述
Silicon Controlled Rectifier, 7317A I(T)RMS, 5200V V(DRM), 5200V V(RRM), 1 Element, 101A322, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N1283CH52HOO 数据手册

Date: November, 2000

Data Sheet: 99T03

Issue: 3

WESTCODE

Provisional Data

Phase Control Thyristor

Types N1283CH43 to N1283CH52

Absolute maximum ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage (note 1)

Non-repetitive peak off-state voltage (note 1)

Repetitive peak reverse voltage (note 1)

Non-repetitive peak reverse voltage (note 1)

4300-5200

4400-5300

MAXIMUM

LIMITS

RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C (note 2)

Mean on-state current. T_sink=85°C (note 2)

Mean on-state current. T_sink=85°C (note 3)

Nominal RMS on-state current, T_sink=25°C (note 2)

D.C. on-state current, T_sink=25°C (note 4)

3764

2658

1680

7317

6620

49.5

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM(note 5)

A²s

A/µs

≤

Peak non-repetitive surge t_p=10ms, V_RM10V (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.4V_RRM(note 5)

12.25x10⁶

15.13x10⁶

150

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V (note 5)

Critical rate of rise of on-state current, repetitive (note 6)

Critical rate of rise of on-state current, non-repetitive (note 6)

Peak forward gate current

di/dt

300

I_FGM

V_RGM

P_G(AV)

P_GM

V_GD

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage (Note 7)

Operating temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67%V_DRM, I_T=5000A, I_FG=2A, t_r=500ns.

7) Rated V_DRM.

Types N1283CH43-52 Provisional Data Sheet 99T03AD Issue 3

page 1 of 9

November, 2000

12 3 4 5 6 7...9

中文翻译

下载PDF

与N1283CH52HOO相关器件

型号	品牌	获取价格	描述	数据表
N1283CH52J00	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 6620000mA I(T), 5200V V(DRM),
N1283CH52JOO	IXYS	获取价格	Silicon Controlled Rectifier, 7317 A, 5200 V, SCR, 101A322, 3 PIN
N1283CH52K00	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 6620000mA I(T), 5200V V(DRM),
N1283CH52KOO	IXYS	获取价格	Silicon Controlled Rectifier, 7317A I(T)RMS, 5200V V(DRM), 5200V V(RRM), 1 Element, 101A32
N1283CH52L00	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 6620000mA I(T), 5200V V(DRM),
N1283CZ36	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
N1283CZ36GOO	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
N1283CZ36HOO	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
N1283CZ36JOO	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
N1283CZ36KOO	LITTELFUSE	获取价格	Silicon Controlled Rectifier,