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N0992YS060 PDF预览

N0992YS060

更新时间: 2024-11-24 14:43:55
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
9页 94K
描述
Silicon Controlled Rectifier, 1995A I(T)RMS, 1646000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, 101A335, 3 PIN

N0992YS060 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.81
Is Samacsys:N配置:SINGLE
关态电压最小值的临界上升速率:1000 V/us最大直流栅极触发电流:150 mA
最大直流栅极触发电压:3 V最大维持电流:500 mA
JESD-30 代码:O-CXDB-X3最大漏电流:40 mA
通态非重复峰值电流:11000 A元件数量:1
端子数量:3最大通态电流:1646000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:1995 A
断态重复峰值电压:600 V重复峰值反向电压:600 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

N0992YS060 数据手册

 浏览型号N0992YS060的Datasheet PDF文件第2页浏览型号N0992YS060的Datasheet PDF文件第3页浏览型号N0992YS060的Datasheet PDF文件第4页浏览型号N0992YS060的Datasheet PDF文件第5页浏览型号N0992YS060的Datasheet PDF文件第6页浏览型号N0992YS060的Datasheet PDF文件第7页 
Date:- 15 Feb, 2001  
Data Sheet Issue: 1  
WESTCODE  
Phase Control Thyristor  
Types N0992YS020 to N0992YS060  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
200-600  
200-600  
200-600  
300-700  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
992  
660  
A
A
382  
A
1995  
A
1646  
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
11000  
12100  
605×103  
732×103  
500  
A
A
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
diT/dt  
1000  
VRGM  
PG(AV)  
PGM  
VGD  
5
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
0.25  
V
THS  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet Issue 1. Types N0992YS020 to N0992YS060.  
Page 1 of 9  
February, 2001  

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