生命周期: | Transferred | 包装说明: | BGA-48 |
Reach Compliance Code: | unknown | 风险等级: | 5.79 |
最长访问时间: | 150 ns | JESD-30 代码: | R-PBGA-B48 |
长度: | 10 mm | 内存密度: | 8388608 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 512KX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 2.2 V |
最小供电电压 (Vsup): | 1.4 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N08M1618L1AB-85I | AMI |
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Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, BGA-48 | |
N08M1618L1AD-150I | AMI |
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Standard SRAM, 512KX16, 150ns, CMOS, DIE | |
N08M1618L1AD-85I | AMI |
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Standard SRAM, 512KX16, 85ns, CMOS, DIE | |
N08M1618L1AW | AMI |
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8Mb Ultra-Low Power Asynchronous Medical CMOS | |
N08M163WL1A | NANOAMP |
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8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit | |
N08M163WL1AB | NANOAMP |
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8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit | |
N08M163WL1AB-70I | NANOAMP |
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8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit | |
N08M163WL1AB-70I-TR | NANOAMP |
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Standard SRAM, 512KX16, 70ns, CMOS, PBGA48 | |
N08M163WL1AD | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit | |
N08M163WL1AD-70I | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit |