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N0676YS160 PDF预览

N0676YS160

更新时间: 2024-11-06 05:32:59
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
9页 95K
描述
Silicon Controlled Rectifier, 1346A I(T)RMS, 1138000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, 101A335, 3 PIN

N0676YS160 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.82
配置:SINGLE关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:150 mA最大直流栅极触发电压:3 V
最大维持电流:500 mAJESD-30 代码:O-CXDB-X3
最大漏电流:40 mA通态非重复峰值电流:7500 A
元件数量:1端子数量:3
最大通态电流:1138000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:1346 A
断态重复峰值电压:1600 V重复峰值反向电压:1600 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:SCRBase Number Matches:1

N0676YS160 数据手册

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Date:- 6 Feb, 2001  
Data Sheet Issue: 1  
WESTCODE  
Phase Control Thyristor  
Types N0676YS120 to N0676YS180  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
1200-1800  
1200-1800  
1200-1800  
1300-1900  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, 25°C, (note 2)  
D.C. on-state current, 25°C, (note 4)  
676  
456  
A
A
270  
A
1346  
1138  
7500  
8300  
281×103  
345×103  
500  
A
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
A
A
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
diT/dt  
1000  
5
VRGM  
PG(AV)  
PGM  
VGD  
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
0.25  
V
THS  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet Issue 1. Types N0676YS120 to N0676YS180  
Page 1 of 9  
February, 2001  

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