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N01L83W2AN25IT PDF预览

N01L83W2AN25IT

更新时间: 2024-01-01 17:26:54
品牌 Logo 应用领域
安森美 - ONSEMI 静态存储器
页数 文件大小 规格书
10页 194K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit

N01L83W2AN25IT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1, TSSOP32,.56,20
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.78最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
长度:11.8 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.56,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.25 mm
最大待机电流:0.00001 A最小待机电流:1.8 V
子类别:SRAMs最大压摆率:0.014 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:8 mm
Base Number Matches:1

N01L83W2AN25IT 数据手册

 浏览型号N01L83W2AN25IT的Datasheet PDF文件第1页浏览型号N01L83W2AN25IT的Datasheet PDF文件第3页浏览型号N01L83W2AN25IT的Datasheet PDF文件第4页浏览型号N01L83W2AN25IT的Datasheet PDF文件第5页浏览型号N01L83W2AN25IT的Datasheet PDF文件第6页浏览型号N01L83W2AN25IT的Datasheet PDF文件第7页 
N01L83W2A  
Functional Block Diagram  
Word  
Address  
Inputs  
Address  
Decode  
Logic  
A - A  
0
3
Input/  
Output  
Mux  
Page  
8K Page  
x 16 word  
x 8 bit  
Address  
Inputs  
Address  
A - A  
Decode  
Logic  
4
16  
and  
I/O - I/O  
0
7
RAM Array  
Buffers  
CE1  
CE2  
WE  
OE  
Control  
Logic  
Functional Description  
I/O0 - I/O7  
CE1  
CE2  
WE  
OE  
MODE  
POWER  
Standby1  
Standby1  
Write2  
H
X
L
L
L
X
L
X
X
L
X
X
X2  
L
H
High Z  
High Z  
Standby  
Standby  
Active  
H
H
H
Data In  
Data Out  
High Z  
H
H
Active  
Active  
Read  
Active  
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated  
from any external influence and disabled from exerting any influence externally.  
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
8
pF  
1. These parameters are verified in device characterization and are not 100% tested  
Rev. 10 | Page 2 of 10 | www.onsemi.com  

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