Datasheet > MXSMCG5629

MXSMCG5629

更新时间： 2024-11-24 04:28:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	426K
描述
Trans Voltage Suppressor Diode, 1500W, 5.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, PLASTIC PACKAGE-2

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数据手册

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MXSMCG5629 数据手册

SMCG5629 thru SMCG5665A

and SMCJ5629 thru SMCJ5665A

Transient Voltage Suppressors

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These surface mount Transient Voltage Suppressors (TVSs) are used for protecting

sensitive components requiring low clamping voltage levels. They are rated at high

current impulses typically generated by inductive switching transients. Other

benefits are achieved with low-profile surface mount J-bend or Gull-wing terminals

for stress-relief and lower weight. Its low-flat profile provides easier insertion or

automatic handling benefits compared to other MELF style packages. Options for

screening similar to JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX,

MV or MSP respectively for part number prefixes and high reliability screening in

accordance with MIL-PRF-19500/507.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Working Standoff Voltages: 5.5 volts to 171 volts

Metallurgically bonded

Reliability data per JESD22-A108, JESD22-A104,

JESD22-A113-B, JESD22-A101-B, and JESD22-A102

Thermally efficient surface mount with J-bends or

Gull wings termination for stress relief (flat handling

surface and easier placement)

•

For high reliability transient voltage suppression in

low profile surface mount locations requiring easy

placement and strain relief

Light weight for airborne or satellite applications

•

• Superior surge quality to protect from ESD and EFT

transients per IEC61000-4-2 and -4-4

•

Lightning surge protection per IEC61000-4-5 for

Class 1 and 2 with source impedance of 42 Ohms as

well as Class 3 and 4 selectively at lower voltages

(V_WM) and higher surge current (I_PP) ratings herein

•

Options for screening in accordance with MIL-PRF-

19500/500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example,

•

Protects sensitive components such as ICs, CMOS,

designate a MXSMCJ5629A for a JANTX screen.

Bipolar, BiCMOS, ECL, DTL, T²L, etc.

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating temperature: -55°C to +150°C

• Molded epoxy package meets UL94V-0

• Terminals: Solderable per MIL-STD-750

Method 2026. (max 260 °C for 10 sec.)

• Body marked with P/N without SMCJ or SMCG letters

(ie. 5629A, 5640, 5655A, 5662, 5665A, etc.)

• Cathode indicated by band

• Weight: 0.25 grams (approximate)

• Tape & Reel packaging per EIA-481

(2500 units/reel)

Storage temperature: -55°C to +150°C

1500 Watts of Peak Pulse Power at 10/1000 µs as

shown in Figure 3 (see Figure 1 for other t_Pvalues)

Thermal resistance, R_θJL= 20°C/W

•

Impulse repetition rate (duty factor): 0.01%

5.0 Watt steady-state maximum power at T_L=25°C

_clamping(0V to V_(BR)min): 50 picoseconds max

(theoretical)

•

Forward voltage V_F@ 100 Amps 8.3 ms: 3.5 V max.

ELECTRICAL CHARACTERISTICS @ 25^oC (Test Both Polarities)

MICROSEMI

Part Number

MICROSEMI

Part Number

Breakdown

Rated

Standoff

Voltage

Maximum

Standby

Current

Voltage*

Test

Maximum Peak

Reverse Voltage

Maximum Peak

Pulse Current

(V_BR

)

Current

Modified

“G”

Modified

“J”

MIN. MAX.

(I_(BR)

)

(V_WM

)

(I_Dat V_WM

)

(V_Cmax. at I_PP

)

(I_PP

)

Vdc

7.48

7.14

8.25

7.88

9.02

8.61

10.0

9.55

11.0

10.5

12.1

11.6

mAdc

µAdc

1000

500

200

Bend Lead

SMCG5629

SMCG5629A

SMCG5630

SMCG5630A

SMCG5631

SMCG5631A

SMCG5632

SMCG5632A

SMCG5633

SMCG5633A

SMCG5634

SMCG5634A

Bend Lead

SMCJ5629

SMCJ5629A

SMCJ5630

SMCJ5630A

SMCJ5631

SMCJ5631A

SMCJ5632

SMCJ5632A

SMCJ5633

SMCJ5633A

SMCJ5634

SMCJ5634A

6.12

6.45

6.75

7.13

7.38

7.79

8.19

8.65

9.00

9.5

5.50

5.80

6.05

6.40

6.63

7.02

7.37

7.78

8.10

8.55

8.92

9.40

10.8

10.5

11.7

11.3

12.5

12.1

13.8

13.4

15.0

14.5

16.2

15.6

139

143

128

132

120

124

109

112

100

103

9.9

10.5

Microsemi

Page 1

01-24-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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与MXSMCG5629相关器件

型号	品牌	获取价格	描述	数据表
MXSMCG5629A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMCG5629AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMCG5629E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMCG5630	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6.05V V(RWM), Unidirectional, 1 Element, Silicon, D
MXSMCG5630A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6.4V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMCG5630AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6.4V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMCG5631	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, D
MXSMCG5631A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, D
MXSMCG5631AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, D
MXSMCG5631E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, D

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