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MXPLAD30KP110ATR PDF预览

MXPLAD30KP110ATR

更新时间： 2024-11-30 20:05:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管电视
页数 文件大小 规格书
4页 336K
描述
30000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-1

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中文翻译

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MXPLAD30KP110ATR 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active包装说明：R-PSSO-G1
针数：1Reach Compliance Code：unknown
风险等级：5.39Is Samacsys：N
其他特性：HIGH RELIABILITY最大击穿电压：135 V
最小击穿电压：122 V外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PSSO-G1
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值反向功率耗散：30000 W元件数量：1
端子数量：1封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：2.5 W认证状态：Not Qualified
最大重复峰值反向电压：110 V表面贴装：YES
技术：AVALANCHE端子面层：TIN LEAD
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MXPLAD30KP110ATR 数据手册

 浏览型号MXPLAD30KP110ATR的Datasheet PDF文件第2页浏览型号MXPLAD30KP110ATR的Datasheet PDF文件第3页浏览型号MXPLAD30KP110ATR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 30,000 W  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 14 to 400 V standoff voltages (VWM  
- Fast response  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MPLAD30KP14A thru MPLAD30KP400CA, e3  
FEATURES  
.
.
.
.
High reliability controlled devices with fabrication and assembly lot traceability  
100 % surge tested devices  
Low profile surface mount  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
.
.
Suppresses transients up to 30 kW @ 10/1000 µs and 200 kW @ 8/20 µs (see Figure 1)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
.
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
o
o
Class 1,2,3,4,5: MPLAD30KP14A to 400CA  
Class 5: MPLAD30KP14A to 400CA (short distance)  
Class 5: MPLAD30KP14A to 220CA (long distance)  
.
.
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:  
o
o
Class 1,2,3: MPLAD30KP14A to 400CA  
Class 4: MPLAD30KP14A to 220CA  
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:  
o
o
o
Class 2: MPLAD30KP10A to 400CA  
Class 3: MPLAD30KP14A to 220CA  
Class 4: MPLAD30KP14A to 110CA  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 30,000 watts at 10/1000 μs (also see Figures 1 and 2)  
with impulse repetition rate (duty factor) of 0.05 % or less  
.
.
.
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 ºC to +150 ºC  
Thermal resistance: 0.5 ºC/W junction to case or 50ºC/W junction to ambient when mounted  
on FR4 PC board with recommended mounting pad (see page 2)  
.
Steady-State Power dissipation: 250 watts at TC = 25 °C or 2.5 watts at TA = 25 °C when  
mounted on FR4 PC board as described for thermal resistance  
.
.
Forward Surge Voltage: 1500 Amps (theoretical) at 8.3mS half-sine wave (unidirectional  
devices only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01005 Rev D, November 2010  
High Reliability Product Group  
Page 1 of 4  
1234

中文翻译

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MXPLAD30KP11AE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 11V V(RWM), Unidirectional, 1 Element, Silicon, RO
MXPLAD30KP11ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 11V V(RWM), Unidirectional, 1 Element, Silicon, PL

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