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MXLSMCJ12AE3 PDF预览

MXLSMCJ12AE3

更新时间: 2024-11-14 18:55:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 485K
描述
Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN

MXLSMCJ12AE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-J2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.51
Is Samacsys:N其他特性:HIGH RELIABILITY
最大击穿电压:14.7 V最小击穿电压:13.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:1.56 W
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:12 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn) - annealed
端子形式:J BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MXLSMCJ12AE3 数据手册

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