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MXLSMBJ13CAE3 PDF预览

MXLSMBJ13CAE3

更新时间: 2024-12-01 18:23:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 565K
描述
Trans Voltage Suppressor Diode, 600W, 13V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

MXLSMBJ13CAE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-J2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.53
Is Samacsys:N其他特性:HIGH RELIABILITY
最大击穿电压:15.9 V最小击穿电压:14.4 V
击穿电压标称值:15.15 V最大钳位电压:21.5 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1.38 W
认证状态:Not Qualified最大重复峰值反向电压:13 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn) - annealed
端子形式:J BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MXLSMBJ13CAE3 数据手册

 浏览型号MXLSMBJ13CAE3的Datasheet PDF文件第2页浏览型号MXLSMBJ13CAE3的Datasheet PDF文件第3页浏览型号MXLSMBJ13CAE3的Datasheet PDF文件第4页浏览型号MXLSMBJ13CAE3的Datasheet PDF文件第5页浏览型号MXLSMBJ13CAE3的Datasheet PDF文件第6页浏览型号MXLSMBJ13CAE3的Datasheet PDF文件第7页 

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