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MXLSMBJ10CAE3 PDF预览

MXLSMBJ10CAE3

更新时间: 2024-11-29 18:23:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 565K
描述
Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

MXLSMBJ10CAE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-J2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.23
其他特性:HIGH RELIABILITY最大击穿电压:12.3 V
最小击穿电压:11.1 V击穿电压标称值:11.7 V
最大钳位电压:17 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-J2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:1.38 W认证状态:Not Qualified
最大重复峰值反向电压:10 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:J BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MXLSMBJ10CAE3 数据手册

 浏览型号MXLSMBJ10CAE3的Datasheet PDF文件第2页浏览型号MXLSMBJ10CAE3的Datasheet PDF文件第3页浏览型号MXLSMBJ10CAE3的Datasheet PDF文件第4页浏览型号MXLSMBJ10CAE3的Datasheet PDF文件第5页浏览型号MXLSMBJ10CAE3的Datasheet PDF文件第6页浏览型号MXLSMBJ10CAE3的Datasheet PDF文件第7页 

MXLSMBJ10CAE3 替代型号

型号 品牌 替代类型 描述 数据表
MASMBJ10CA MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MSMBJ10CAE3 MICROSEMI

类似代替

Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

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