Datasheet > MX29LV640BBTC-90

MX29LV640BBTC-90

更新时间： 2024-01-17 09:47:17

品牌	Logo	应用领域
旺宏电子 - Macronix		存储
页数	文件大小	规格书
69页	502K
描述
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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技术参数
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MX29LV640BBTC-90 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TSOP1	包装说明：	TSOP1, TSSOP48,.8,20
针数：	48	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.77	最长访问时间：	90 ns
备用内存宽度：	8	启动块：	BOTTOM
命令用户界面：	YES	通用闪存接口：	YES
数据轮询：	YES	JESD-30 代码：	R-PDSO-G48
JESD-609代码：	e6	长度：	18.4 mm
内存密度：	67108864 bit	内存集成电路类型：	FLASH
内存宽度：	16	湿度敏感等级：	3
功能数量：	1	部门数/规模：	8,127
端子数量：	48	字数：	4194304 words
字数代码：	4000000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	4MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装等效代码：	TSSOP48,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	3/3.3 V	编程电压：	3 V
认证状态：	Not Qualified	就绪/忙碌：	YES
座面最大高度：	1.2 mm	部门规模：	8K,64K
最大待机电流：	0.000015 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	TIN BISMUTH
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
切换位：	YES	类型：	NOR TYPE
宽度：	12 mm	Base Number Matches：	1

MX29LV640BBTC-90 数据手册

MX29LV640BT/BB

64M-BIT[8Mx8/4Mx16] SINGLEVOLTAGE3VONLY

FLASHMEMORY

FEATURES

GENERAL FEATURES

SOFTWARE FEATURES

• Single Power Supply Operation

• Support Common Flash Interface (CFI)

- 2.7 to 3.6 volt for read, erase, and program opera-

tions

• 8,388,608 x 8 / 4,194,304 x 16 switchable

• Sector structure

- 8KB (4KW) x 8 and 64KB(32KW) x 127

• Sector Protection/Chip Unprotect

- Provides sector group protect function to prevent

program or erase operation in the protected sector

group

- Flash device parameters stored on the device and

provide the host system to access.

• Erase Suspend/ Erase Resume

- Suspends sector erase operation to read data from

or program data to another sector which is not being

erased

• Status Reply

- Data# polling & Toggle bits provide detection of pro-

gram and erase operation completion

- Provides chip unprotect function to allow code

changes

- Provides temporary sector group unprotect function

for code changes in previously protected sector groups

• Secured Silicon Sector

HARDWARE FEATURES

• Ready/Busy (RY/BY#) Output

- Provides a hardware method of detecting program

and erase operation completion

• Hardware Reset (RESET#) Input

- Provides a hardware method to reset the internal

state machine to read mode

- Provides a 128-word area for code or data that can

be permanently protected.

- Once this sector is protected, it is prohibited to pro-

gram or erase within the sector again.

• Latch-up protected to 250mA from -1V to Vcc + 1V

• Low Vcc write inhibit is equal to or less than 1.5V

• Compatible with JEDEC standard

- Pin-out and software compatible to single power sup-

ply Flash

• WP#/ACC input

- Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect

status

- ACC (high voltage) accelerates programming time

for higher throughput during system

PERFORMANCE

• High Performance

PACKAGE

• 48-pinTSOP

• 63-Ball CSP

• All Pb-free devices are RoHS Compliant

- Fast access time: 90/120ns

- Fast program time: 11us/word, 45s/chip (typical)

- Fast erase time: 0.9s/sector, 45s/chip (typical)

• Low Power Consumption

- Low active read current: 9mA (typical) at 5MHz

- Low standby current: 0.2uA (typ.)

• Minimum 100,000 erase/program cycle

• 10 years data retention

GENERAL DESCRIPTION

The MX29LV640BT/BB is a 64-mega bit Flash memory

organized as 8M bytes of 8 bits or 4M words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29LV640BT/BB is packaged in 48-pinTSOP and

63-ball CSP. It is designed to be reprogrammed and

erased in system or in standard EPROM programmers.

The standard MX29LV640BT/BB offers access time as

fast as 90ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV640BT/BB has separate chip enable

(CE#) and output enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

P/N:PM1076

REV. 1.2, SEP. 07, 2005

12 3 4 5 6 7...69

中文翻译

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与MX29LV640BBTC-90相关器件

型号	品牌	获取价格	描述	数据表
MX29LV640BBTC-90G	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBTI-12	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBTI-12G	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBTI-90	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBTI-90G	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBXBC-12	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBXBC-12G	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBXBC-90	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBXBC-90G	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBXBI-12	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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