MX29LV640BTI-90G

更新时间： 2024-02-12 04:31:21

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
70页	1166K
描述
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MX29LV640BTI-90G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TSOP1
包装说明：	12 X 20 MM, LEAD FREE, PLASTIC, MO-142, TSOP1-48	针数：	48
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.1.A
HTS代码：	8542.32.00.51	风险等级：	5.65
Is Samacsys：	N	最长访问时间：	90 ns
备用内存宽度：	8	启动块：	BOTTOM
命令用户界面：	YES	通用闪存接口：	YES
数据轮询：	YES	JESD-30 代码：	R-PDSO-G48
JESD-609代码：	e3	长度：	18.4 mm
内存密度：	67108864 bit	内存集成电路类型：	FLASH
内存宽度：	16	湿度敏感等级：	3
功能数量：	1	部门数/规模：	8,127
端子数量：	48	字数：	4194304 words
字数代码：	4000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装等效代码：	TSSOP48,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	3/3.3 V	编程电压：	3 V
认证状态：	Not Qualified	就绪/忙碌：	YES
座面最大高度：	1.2 mm	部门规模：	8K,64K
最大待机电流：	0.000015 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
切换位：	YES	类型：	NOR TYPE
宽度：	12 mm	Base Number Matches：	1

MX29LV640BTI-90G 数据手册

MX29LV640T/B

64M-BIT[8Mx8/4Mx16] SINGLEVOLTAGE3VONLY

FLASHMEMORY

FEATURES

GENERAL FEATURES

SOFTWARE FEATURES

• Single Power Supply Operation

• Support Common Flash Interface (CFI)

- 2.7 to 3.6 volt for read, erase, and program opera-

tions

• 8,388,608 x 8 / 4,194,304 x 16 switchable

• Sector structure

- 8KB (4KW) x 8 and 64KB(32KW) x 127

• Sector Protection/Chip Unprotect

- Provides sector group protect function to prevent

program or erase operation in the protected sector

group

- Flash device parameters stored on the device and

provide the host system to access.

• Erase Suspend/ Erase Resume

- Suspends sector erase operation to read data from

or program data to another sector which is not being

erased

• Status Reply

- Data polling & Toggle bits provide detection of pro-

gram and erase operation completion

- Provides chip unprotect function to allow code

changes

- Provides temporary sector group unprotect function

for code changes in previously protected sector groups

• Secured Silicon Sector

HARDWARE FEATURES

• Ready/Busy (RY/BY) Output

- Provides a hardware method of detecting program

and erase operation completion

• Hardware Reset (RESET) Input

- Provides a hardware method to reset the internal

state machine to read mode

- Provides a 128-word area for code or data that can

be permanently protected.

- Once this sector is protected, it is prohibited to pro-

gram or erase within the sector again.

• Latch-up protected to 250mA from -1V to Vcc + 1V

• Low Vcc write inhibit is equal to or less than 1.5V

• Compatible with JEDEC standard

- Pin-out and software compatible to single power sup-

ply Flash

• WP Pin

- Write protect (WP) function allows protection of two

outermost boot sectors, regardless of sector protect

status

PACKAGE

PERFORMANCE

• High Performance

• 48-pinTSOP

• 63-ball CSP

• 64-ball Easy BGA

- Fast access time: 90/120ns

- Fast program time:11us/word, 45s/chip (typical)

- Fast erase time: 0.9s/sector, 45s/chip (typical)

• Low Power Consumption

- Low active read current: 10mA (typical) at 5MHz

- Low standby current: 0.2uA (typ.)

• Minimum 100,000 erase/program cycle

• 20-year data retention

GENERAL DESCRIPTION

The standard MX29LV640T/B offers access time as fast

as 90ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29LV640T/B has separate chip enable (CE) and

output enable (OE) controls.

The MX29LV640T/B is a 64-mega bit Flash memory or-

ganized as 8M bytes of 8 bits or 4M bytes of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29LV640T/B is packaged in 48-pin TSOP, 63-

ball CSP and 64-ball Easy BGA. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

P/N:PM0920

REV. 1.2, NOV. 05, 2003

12 3 4 5 6 7...70

中文翻译

下载PDF

与MX29LV640BTI-90G相关器件

型号	品牌	获取价格	描述	数据表
MX29LV640BTMC-90G	Macronix	获取价格	Flash, 4MX16, 90ns, PDSO44, ROHS COMPLIANT, SOP-44
MX29LV640BTTC-12	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTTC-12G	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTTC-90	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTTC-90G	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTTI-12	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTTI-12G	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTTI-90	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTTI-90G	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTXBC-12	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

与MX29LV640BTI-90G相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

11
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

10
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

12
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

15

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29LV640BTI-90G

MX29LV640BTI-90G 技术参数

MX29LV640BTI-90G 数据手册

与MX29LV640BTI-90G相关器件

与MX29LV640BTI-90G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29LV640BTI-90G

MX29LV640BTI-90G 技术参数

MX29LV640BTI-90G 数据手册

与MX29LV640BTI-90G相关器件

与MX29LV640BTI-90G相关文章

您还可以找

您在本页遇到什么问题？